Programmed circuit in a semiconductor device
AssigneeNEC Corporation
InventorSatoshi Tamaki
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Abstract
A semiconductor memory device has a redundancy decoder for replacing a defective memory cell by a redundancy memory cell. The redundancy decoder includes a programmed flip-flop having first and second transistors. The load of the first transistor is implemented by a fuse which is subjected selectively to cut-out or non-cut for programming by a laser beam, whereas the load of the second transistor is implemented by a resistor including a plurality of serial fuses subjected to non-cut. The redundancy decoder operates in a higher speed and has a lower power consumption.
Claims15
A programmed flip-flop comprising first and second transistors, first and second loads connected in series with said first and second transistors, respectively, between a first source line and a second source line, each of said first and second transistors having a control electrode connected to a node connecting the other of said first and second transistors and a corresponding one of said first and second loads, said first load being subjected to programming for changing resistance of said first load;
- and
- further comprising third and fourth transistors connected between said second source line and said first and second loads, respectively.
A semiconductor memory device comprising a programmed circuit including a programmed flip-flop comprising first and second transistors, first and second loads connected in series with said first and second transistors, respectively, between a first source line and a second source line, each of said first and second transistors having a control electrode connected to a node connecting the other of said first and second transistors and a corresponding one of said first and second loads, said first load being subjected to programming for changing resistance of said first load;
- and
- further comprising third and fourth transistors connected between said second source line and said first and second loads, respectively.
Dependencies are inferred from the claim text.