Single transistor cell, method for manufacturing the same, memory circuit composed of single transistor cells, and method for driving the same

A method for driving a memory circuit, comprising:

• writing a “1” to an arbitrary cell by
• applying a voltage V to a plate line connected to a ferroelectric layer,
• grounding a word line connected to a gate of a cell transistor of said arbitrary cell facing the ferroelectric layer, and
• floating a drive line connected to a source of the cell transistor and a bit line connected to a drain of the cell transistor;
• writing a “0” to said arbitrary cell, by
• applying a voltage V to the plate line,
• applying a voltage V to the word line, and
• floating the drive line and the bit line;
• and
• reading data stored in said arbitrary cell, by
• applying a voltage V to the drive line, and
• measuring a current induced in the bit line.

A method for driving a memory circuit, comprising:

• writing a “1” to an arbitrary cell by
• applying a voltage V to a plate line connected to a ferroelectric layer,
• applying a voltage −V to a word line connected to a gate of a cell transistor of said arbitrary cell facing the ferroelectric layer, and
• floating a drive line connected to a source of the cell transistor and a bit line connected to a drain of the cell transistor;
• writing a “0” to said arbitrary cell, by
• applying a voltage −V to the plate line,
• applying a voltage V to the word line, and
• floating the drive line and the bit line;
• and
• reading data stored in said arbitrary cell, by
• applying a voltage V to the drive line, and
• measuring a current induced in the bit line.