Exposure method, exposure apparatus, and mask
AssigneeNikon Corporation
InventorsMakoto Tsuchiya, Kei Nara, Nobutaka Fujimori, Manabu Toguchi, Masami Seki
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AssigneeNikon Corporation
InventorsMakoto Tsuchiya, Kei Nara, Nobutaka Fujimori, Manabu Toguchi, Masami Seki
Estimating the term…
An exposure method, exposure apparatus and mask are suitable for manufacturing an active matrix liquid crystal display including, for example, a gate electrode layer and a source/drain electrode layer. A stitching portion between unit patterns in a second layer is offset from the stitching portion in a first layer by a predetermined distance. The stitching portions of the second layer are always positioned over unit patterns of the first layer. Accordingly, the contrast gap that occurs at the stitching portion as a boundary is defined only by an error in the exposure position of the second layer. The contrast gap is not affected by an error in the exposure position of the first layer, unlike the conventional method. Because the contrast gap caused by the error in the exposure position of the first layer is eliminated, the total contrast gap that occurs at the stitching portion as a boundary is significantly reduced.
An exposure method comprising the steps of:
An exposure method comprising:
An exposure apparatus for forming a first layer and a second layer on a photosensitive substrate, the exposure apparatus comprising:
A mask set including a plurality of masks for forming a first layer and a second layer on a photosensitive substrate, each of said masks having a unit pattern with an overlap pattern for a stitching exposure technique formed thereon, wherein the unit pattern on one mask has different dimensions from dimensions of the unit pattern of another mask.
An exposure method comprising the steps of:
Dependencies are inferred from the claim text.