Semiconductor carrier and method for manufacturing the same
AssigneeNEC Corporation
InventorsTadanori Shimoto, Koji Matsui
Life of this patent
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Abstract
A semiconductor carrier is provided with a through hole bump. The bump is formed by coating a photosensitive adhesive consisting of an epoxy acrylate having a fluorene skeleton or polybenzoxazole over a support substrate having a conductive interconnection pattern, exposing and developing the adhesive for forming a through hole therein, and plating for filling a metal within the through hole. The photosensitive adhesive is preferably heated at 80-160° C. prior to the plating process if it comprises the epoxy acrylate having a fluorene skeleton and at 80-250° C. if it comprises the polybenzoxazole.
Claims5
A semiconductor carrier comprising a support substrate having a conductive interconnection pattern, and a bump formed by coating a photosensitive adhesive over said support substrate and said conductive interconnection pattern thereof, exposing and developing said adhesive for forming a through hole therein, and plating for filling a metal within said through hole,
- wherein said photosensitive adhesive is an adhesive selected from the group consisting of an epoxy acrylate having a fluorine skeleton and polybenzoxazole.
A method for manufacturing a semiconductor carrier including a support substrate having a conductive interconnection pattern, comprising the steps of:
- coating a photosensitive adhesive consisting of an epoxy acrylate having a fluorine skeleton on said support substrate and said conductive interconnection pattern thereof;
- exposing and developing said adhesive for forming a through hole therein;
- thereafter heating at a temperature of 80-160° C.;
- and
- then plating for forming a bump by filling a metal within said through hole.
A method for manufacturing a semiconductor carrier including a support substrate having a conductive interconnection pattern, comprising the steps of:
- coating a photosensitive adhesive consisting of a polybenzoxazole on said support substrate and said conductive interconnection pattern;
- exposing and developing said adhesive for forming a through hole therein;
- thereafter heating at a temperature of 80-250° C.;
- and
- then plating for forming a bump by filling a metal within said through hole.
Dependencies are inferred from the claim text.