US 6,204,561 B1 · Semiconductor device having two-layer contact

Abstract

Semiconductor device and method for manufacturing the same prevent the spread of a tungsten film out of an opening portion of a contact hole when the tungsten is grown in the contact hole and avoid inferior wiring shape and inter-wiring shirt-circuit. After a titanium/titanium nitride film is formed along an inner surface of the contact hole, a photo-resist film is applied. Then, the photo-resist film is etched away until a distance from an upper end of the contact hole to the surface of photo-resist film is not smaller than one-half of a width of the contact hole when the titanium/titanium nitride film is formed. After the titanium/titanium nitride film is etched by using the photo-resist as a mask, the photo-resist film is removed and a tungsten layer is selectively grown by using the titanium/titanium nitride film as a seed.

Claims10

Dependent claims

A semiconductor device comprising:

a semiconductor substrate;
an insulation film formed on said semiconductor substrate;
a plurality of contact holes formed through said insulation film having a plurality of different widths;
a first conductive film formed on an inner surface of each of said plurality of contact holes;
an end of said first conductive film formed no closer to an opening portion of said contact hole, for each of said plurality of contact holes, than a distance represented by the difference of a value equal to one-half the width of the contact hole having the largest width and a value equal to twice a thickness of said first conductive film;
and
a second conductive film formed on said first conductive film to fill each of said plurality of contact holes.

4 more elements

Dependencies are inferred from the claim text.

Semiconductor device having two-layer contact

Life of this patent

Semiconductor device having two-layer contact

Life of this patent

Abstract

Claims10