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AssigneeUniphase Laser Enterprise AG
InventorsAndreas Daetwyler, Urs Deutsch, Christoph Harder, Wilhelm Heuberger, Eberhard Latta, Abram Jakubowicz, Albertus Oosenbrug, William Patrick, Peter Roentgen, Erica Williams
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As will be described in more detail hereinafter, there is disclosed herein a titanium nitride diffusion barrier layer and associated method for use in non-silicon semiconductor technologies. In one aspect of the invention, a semiconductor device includes a non-silicon active surface. The improvement comprises an ohmic contact serving to form an external electrical connection to the non-silicon active surface in which the ohmic contact includes at least one layer consisting essentially of titanium nitride. In another aspect of the invention, a semiconductor ridge waveguide laser is disclosed which includes a semiconductor substrate and an active layer disposed on the substrate. A cladding layer is supported partially on the substrate and partially on the active layer. The cladding layer includes a ridge portion disposed in a confronting relationship with the active region. A metallization structure substantially covers the ridge portion and includes at least one layer consisting essentially of titanium nitride.
In a semiconductor device including a non-silicon active surface, the improvement comprising:
A semiconductor ridge waveguide laser comprising:
In a semiconductor device including a non-silicon active surface for use in forming an external electrical connection to said device, a contact comprising:
In a semiconductor device including a non-silicon active surface for use in forming an external electrical connection to said device, a method of forming a contact, said method comprising the steps of:
Dependencies are inferred from the claim text.