Microwave-frequency hybrid integrated circuit
AssigneeSamsung Electronics Co., Ltd.
InventorViktor Anatolievich Iovdalsky
Life of this patent
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Abstract
The microwave hybrid integrated circuit, is providing having a dielectric board (1) provided with a topological metallization pattern (2) and a number of recesses (3) in which semiconductor chips (5) are fixed with a binder (4). The face surface of the chips (5) provided with contact pads (6) are coplanar with the surface of the board (1), and the contact pads (6) of the chips (5) are electrically connected to the topological metallization pattern (2). The walls of the recesses (3) are inclined towards the plane of the board (1) at an angle (α) of 90.1 to 150°.
Claims2
A microwave hybrid integrated circuit, comprising:
- a dielectric board having a plane, a surface and at least one recess, the recess includes a wall, the wall of the recess is inclined towards the plane of the board at an angle (∝) of 90.1 to 150°, and the recess includes a metalization;
- a topological metalization pattern on the board, the topological metallization pattern is electrically connected to the metalization of the recess;
- and
- a semiconductor chip having a surface, the semiconductor chip fixed in the recess with a binder, the surface of the semiconductor chip having a contact pad, the contact pad is coplanar with the surface of the dielectric board and is electrically connected to the topological metalization pattern.
Dependencies are inferred from the claim text.