US 6,204,544 B1Granted

Laterally movable gate field effect transistors for microsensors and microactuators

AssigneeBoard of Supervisors of Louisiana State University and Agricultural and Mechanical College

InventorsXiaodong Wang, Pratul K. Ajmera

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Abstract

A field effect transistor is disclosed whose output is modulated by a control gate that is movable in a direction parallel to the transistor substrate surface. The device is capable of lateral motion with large amplitude (tens of micrometers) with appropriate selection of gate materials and design. The transistors may be used in microsensors or microactuators. When used as a microsensor, the gate may be driven parallel to the substrate by the force to be measured (such as an inertial force). When used as a microactuator, the gate may be driven by an actuating drive such as an electrostatic, magnetic, or thermal actuation. The device measures or controls the displacement of a mechanical structure parallel to the transistor substrate. The change in the output current of the transistor is a linear function of the in-plane displacement of the gate, allowing direct mechanical displacement-to-current conversion. This direct, linear conversion provides improved sensitivity, improved signal-to-noise ratio, and improved signal conditioning and signal processing. It allows precise measurement, actuation, and control of lateral displacement.

Claims2

Dependent claims

A microactuator comprising an actuator and a field effect transistor;

wherein said transistor comprises a source, a drain, a gate, and an insulator;
and wherein:
(a) at least one surface of said source and at least one surface of said drain are coplanar, wherein the coplanar region between these surfaces of said source and said drain is defined to be the channel of said transistor;
(b) said insulator covers the channel;
(c) said gate is laterally movable in a plane that is parallel to the channel of the transistor, such that the portion of the channel that is covered by said gate varies as said gate moves in this parallel plane, and such that at least a portion of said gate covers said source, and such that at least a portion of said gate covers said drain;
(d) when at least a portion of said gate covers the channel, then a voltage on said gate beyond a pre-determined threshold voltage, in conjunction with a voltage between said drain and said source, induces a drain current between said source and said drain;
wherein the drain current is a linear function of the portion of the channel that is covered by said gate;
and
(e) said gate is connected to said actuator, whereby the drain current measures the position of said gate and of said actuator.

6 more elements

Dependencies are inferred from the claim text.