Semiconductor apparatus and manufacturing method therefor

Abstract

In a MISFET incorporating a silicide compound made of metal having a high melting point and formed on an impurity diffusion layer for the drain and source, a MISFET disclosed herein comprises an impurity diffusion layer for the drain and source, a gate insulating film, a gate electrode, a side-wall insulating film formed on the side wall of the gate electrode, an interlayer insulating film having an opened portion including a side-portion removed region obtained by removing a portion of the side portion of the side-wall insulating film on an impurity diffusion layer for the drain and source, a silicide compound layer formed on the impurity diffusion layer for the drain and source, the silicide compound layer being formed on the bottom surface of the opening of the interlayer insulating film corresponding to the side-portion removed region, and a conductor formed in the opening and made contact with the silicide compound layer. This structural feature lowers the contact resistance by maintaining a sufficiently large contact area of a source and drain diffusion layer without a necessity of elongating the contact distance so as to lower the parasitic resistance depending on the contact distance and improve the performance of the MISFET.

Dependencies are inferred from the claim text.