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US 6,204,512 B1Granted
Gallium nitride-based III-V group compound semiconductor device and method of producing the same
AssigneeNichia Chemical Industries, Ltd.
InventorsShuji Nakamura, Takao Yamada, Masayuki Senoh, Motokazu Yamada, Kanji Bando
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Abstract
A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
Claims13
A gallium nitride-based III-V Group compound semiconductor device comprising:
- a substrate;
- a first semiconductor layer provided over a portion of said substrate and comprising an n-type gallium nitride-based III-V Group compound semiconductor, said first semiconductor layer including a first portion and a second portion, and having a planar top shape with four corners;
- a second semiconductor layer provided over a portion of said first portion of said first semiconductor layer and comprising a p-type gallium nitride-based III-V Group compound semiconductor;
- a first electrode layer provided over said second portion of said first semiconductor;
- a light-transmitting second electrode layer provided substantially entirely over said second semiconductor layer and ohmically connected to said second semiconductor layer;
- a bonding pad layer provided at a portion of said second electrode layer and electrically connected to said second electrode layer;
- a first bonding wire bonded to a portion of said second portion of said first semiconductor layer, said first bonding wire being bonded at a bonding position on said first semiconductor layer;
- and
- a second bonding wire bonded to a portion of said second electrode layer, said second bonding wire being bonded at a bonding position on said bonding pad layer;
- wherein said bonding position on said first semiconductor layer and said bonding position on said bonding pad layer are arranged substantially on a diagonal line of said first semiconductor layer.
7 more elements
A gallium nitride-based III-V Group compound semiconductor device, comprising:
- a substrate;
- a first semiconductor layer provided over a portion of said substrate and comprising an n-type gallium nitride-based III-V Group compound semiconductor, and having a substantially rectangular planar top shape with first to fourth corners, said first and third corners being on a diagonal line of said first semiconductor layer, said second and fourth corners being on another diagonal line of said first semiconductor layer, said first semiconductor layer having a first portion including said first corner and a second portion including said third corner;
- a second semiconductor layer provided over said first portion of said first semiconductor layer and comprising a p-type gallium nitride-based III-V Group compound semiconductor;
- a first electrode layer provided over at least a portion of said second portion of said first semiconductor;
- a light-transmitting second electrode layer provided substantially entirely over said second semiconductor layer and ohmically connected to said second semiconductor layer;
- a bonding pad layer provided at a portion of said second electrode layer and electrically connected to said second electrode layer;
- a first bonding wire bonded to a portion of said second portion of said first semiconductor layer, said first bonding wire being bonded at a bonding position on said first semiconductor layer;
- and
- a second bonding wire bonded to a portion of said second electrode layer, said second bonding wire being bonded at a bonding position on said bonding pad layer.
6 more elements
Dependencies are inferred from the claim text.