Back illuminated photodetector and method of fabricating the same
AssigneeHamamatsu Photonics K.K.
InventorsHiroshi Akahori, Masaharu Muramatsu
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AssigneeHamamatsu Photonics K.K.
InventorsHiroshi Akahori, Masaharu Muramatsu
Estimating the term…
An n-type buried channel, a silicon oxide film, a poly-Si transfer electrode, a PSG film as an insulating interlayer, an aluminum interconnection, and a silicon nitride film are stacked on one surface of a p-type silicon substrate to form a CCD. The other surface is protected by a silicon oxide film, and a p+-type accumulation layer is formed on the silicon oxide film, thereby forming a back-illuminated CCD on which light, electromagnetic wave, charged particles, or the like is incident through the other surface. A glass substrate is anodically bonded on the CCD via an insulating polyimide film, and a conductive aluminum film. Therefore, the mechanical strength of the device is kept high, and the sensitivity can be increased by thinning the silicon substrate.
A back-illuminated photodetector having an imaging portion for outputting charges in response to incidence of an electromagnetic wave or charged particles on a first surface of a thin semiconductor plate consisting essentially of silicon, the electromagnetic wave or charged particles being transmitted through said thin semiconductor plate, said back-illuminated photodetector comprising:
A method of fabricating a back-illuminated photodetector having, on a semiconductor substrate, an imaging portion for generating charges in response to incidence of an electromagnetic wave or charged particles transmitted through said semiconductor substrate and outputting the charges, comprising:
Dependencies are inferred from the claim text.