Indium source reagent compositions, and use thereof for deposition of indium-containing films on substrates and ion implantation of indium-doped shallow junction microelectronics structures

An In precursor of the formula:

• wherein:
• R′ and R″ may be the sane or different and are independently selected from H, C6-C10 aryl, C6-C10 perfluoroaryl, C1-C6 alkyl, C1-C6 fluoroalkyl, and C1-C6 perfluoroalkyl;
• and
• R1 and R2 may be same or different and are independently selected from C6-C10 aryl, C6-C10 fluoroaryl, C6-C10 perfluoroaryl, C1-C6 alkyl, C1-C6 fluoroalkyl, or C1-C6 perfluoroallyl
• with the proviso that R1 and R2 are not simultaneously both methyl or butyl.

An In precursor of the formula:

• wherein;
• R′ and R″ may be same or different and are independently selected from H, C6-C10 aryl, C6-C10 fluoroaryl, C6-C10 perfluoroaryl, C1-C6 alkyl, C1-C6 fluoroalkyl or C1-C6 perfluoroalkyl;
• and
• R1 and R2 may be same or different and are independently selected from C1-C6 fluoroalkyl.

An In percusor of the formula:

• wherein:
• R′ and R″ may be same or different and are independently selected from H, C6-C10 aryl, C6-C10 fluoroaryl, C6-C10 perfluoroaryl, C1-C6 alkyl, C1-C6 fluoroalkyl or C1-C6 perfluoroaLkyl;
• and
• R1 and R2 may be same or different and are independently selected from C1-C6 perfluoroalkyl.

An indium precursor composition of the formula:

• R1R2InL
• wherein:
• R1 and R2 may be same or different and are independently selected from C6-C10 aryl, C6-C10 fluoroaryl, C6-C10 perfluoroaryl, C1-C6 fluoroalkyl, or C1-C6 perfluoroalkyl;
• and
• L is β-diketonato or carboxylate.