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US 6,204,201 B1Granted
Method of processing films prior to chemical vapor deposition using electron beam processing
AssigneeElectron Vision Corporation
InventorMatthew Ross
Life of this patent
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Abstract
A process for the treatment of the surface of dielectric films to remove moisture and other contaminants. Such treatment is done by electron beam exposure in order to prepare the surface for a subsequent chemical vapor deposition of oxide, nitride or oxynitride layers. The films are useful in the manufacture of integrated circuits.
Claims23
A process for treating a dielectric layer on a substrate which comprises
- (a) heating a surface of the dielectric layer and exposing the dielectric layer to electron beam irradiation under vacuum conditions, for a sufficient time, temperature, electron beam energy and electron beam dose to remove substantially all moisture and/or contaminants from the surface of the dielectric layer, and
- (b) chemical vapor depositing a chemical vapor deposit material onto the surface of the dielectric layer while maintaining said vacuum conditions.
A process for producing a support for a microelectronic device which comprises:
- (a) applying a dielectric layer onto a substrate;
- (b) curing the dielectric layer;
- (c) heating a surface of the dielectric layer and exposing the dielectric layer to electron beam irradiation under vacuum conditions, for a sufficient time, temperature, electron beam energy and electron beam dose to remove substantially all moisture and/or contaminants from the surface of the dielectric layer;
- and
- (d) chemical vapor depositing a chemical vapor deposit material onto the surface of the dielectric layer while maintaining said vacuum conditions.
2 more elements
Dependencies are inferred from the claim text.