Semiconductor device, manufacturing method, and system
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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Abstract
An improved semiconductor device manufacturing system and method is shown. In the system, undesirable sputtering effect can be averted by virtue of a combination of an ECR system and at CVD system. Prior to the deposition according to the above combination, a sub-layer can be pre-formed on a substrate in a reaction chamber and transported to another chamber in which deposition is made according to the combination without making contact with air, so that a junction thus formed has good characteristics.
Claims27
A method of fabricating an electronics device comprising the steps of:
- preparing a multi-chamber CVD apparatus having at least a first chamber and a second chamber, wherein said first and second chambers are isolated from each other by at least one gate valve:
- a first CVD forming step for forming a first layer in the first chamber over a first single substrate where said first CVD forming step includes inputting a first reactive gas to the first chamber where the first reactive gas forms said first layer;
- and
- a second CVD forming step for forming in the second chamber a second layer over a second single substrate where said second CVD forming step includes inputting a second reactive gas to the second chamber where the second reactive gas forms said second layer;
- wherein the flow of the reactive gas in at least one of said first and second reaction chambers is substantially perpendicular to the first and second single substrates. respectively.
A method of fabricating semiconductor devices including at least an insulating layer and a semiconducting layer comprising the steps of:
- preparing a multi-chamber CVD apparatus having at least a first chamber and a second chamber, wherein said first and second chambers arc isolated from each other by at least one gate valve;
- a first CVD forming step for forming one of the insulating layer or the semiconducting layer in the first chamber over a first single substrate where the semiconducting layer comprises silicon, where said first CVD forming step includes inputting a first reactive gas to the first chamber, and where the first reactive gas forms said one of the semiconductive and insulating layers;
- and
- a second CVD forming step for forming in the second chamber the other one of said insulating layer and said semiconducting layer over a second single substrate where said second CVD forming step includes inputting a second reactive gas to the second chamber where the second reactive gas forms said other one of the semiconductor and insulating layers;
- wherein the flow of said first and second reactive gases in the respective chambers is substantially perpendicular to the first and second single substrates, respectively.
A method of fabricating semiconductor devices including at least a first silicon containing layer and a second silicon containing layer adjacent thereto, said method comprising the steps of:
- preparing a multi-chamber CVD apparatus having at least a first chamber and a second chamber, wherein said first and second chambers are isolated from each other by at least one gate valve;
- a first CVD forming step for forming one of the first and second silicon containing layers in the first chamber over a first single substrate, where said first CVD forming step includes inputting a first reactive gas to the first chamber, and where the first reactive gas forms said one of the first and second silicon containing layers;
- a second CVD forming step for forming in the second chamber the other one of said first and second silicon containing layers over a second single substrate where said second CVD forming step includes inputting a second reactive gas to the second chamber where the second reactive gas forms said other one of the first and second silicon containing layers.
- wherein the flow of said first and second reactive gases in the respective chambers is perpendicular to the first and second single substrates, respectively.
A method for fabricating electronic devices comprising the steps of:
- preparing a multi-chamber CVD apparatus having at least a first chamber and a second chamber, wherein said first and second chambers are isolated from each other by at least one gate valve;
- a first CVD forming step for forming a first layer over a first single substrate in the first chamber where said first CVD forming step includes inputting a first reactive gas to the first chamber and activating said first reactive gas to form said first layer through CVD;
- a second CVD forming step for forming a second layer over a second single substrate in the second chamber where said second CVD forming step includes inputting a second reactive gas to the second chamber and activating said second reactive gas to form the second layer through CVD,
- wherein the flow of said first and second reactive oases in the respective chambers is perpendicular to the first and second single substrates respectively.
Dependencies are inferred from the claim text.