Method of forming a film having enhanced reflow characteristics at low thermal budget
AssigneeMicron Technology, Inc.
InventorsGurtej Sandhu, Randhir P. S. Thakur
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Abstract
A method of forming a film having enhanced reflow characteristics at low thermal budget is disclosed, in which a surface layer of material is formed above a base layer of material, the surface layer having a lower melting point than the base layer. In this way, a composite film having two layers is created. After reflow, the surface layer can be removed using conventional methods.
Claims4
A method for improving the reflow properties of a base layer when forming a semiconductor device, comprising the steps of:
- (a) forming a base layer wherein said base layer has a first surface tension and requires a first thermal budget to reflow said base layer;
- (b) forming a surface layer directly upon said base layer by implanting a top portion of the base layer with a dopant, said base layer and said surface layer forming a composite film, wherein said composite film has a second surface tension lower than said first surface tension;
- (c) applying thermal energy to said composite film;
- and
- (d) reflowing said composite film using a second thermal budget lower than said first thermal budget;
- wherein said dopant is an element selected from the group consisting of germanium, boron and phosphorous.
A method for improving the reflow properties of a base layer when forming a semiconductor device, comprising the steps of:
- (a) forming a base layer wherein said base layer has a first surface tension and requires a first thermal budget to reflow said base layer;
- (b) forming a surface layer directly upon said base layer by implanting a top portion of the base layer with a dopant, said base layer and said surface layer forming a composite film, wherein said composite film has a second surface tension lower than said first surface tension;
- (c) applying thermal energy to said composite film;
- and
- (d) reflowing said composite film using a second thermal budget lower than said first thermal budget;
- wherein an energy of approximately 100 keV and a dose of approximately 1×1014 to 1×1016 atoms/cm3 is used for said implanting.
Dependencies are inferred from the claim text.