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US 6,204,194 B1Granted
Method and apparatus for producing a semiconductor device
AssigneeF.T.L. Co., Ltd.
InventorMikio Takagi
Life of this patent
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Abstract
The film growth speed of a conventional vertical heating method, such as SiO2 film, polycrystalline Si film or the like of a semiconductor device, is enhanced by means of discharging and sucking the reaction gas onto and from the Si wafers placed horizontally in the vertical furnace. The wafers are rotated and the wafer-distance is set at 5 mm or more.
Claims14
A method for producing a semiconductor device, in a heating furnace, in which a reaction tube is installed and a temperature-equalizing zone is formed in the reaction tube, comprising the steps of:
- locating semiconductor-silicon wafers in the temperature-equalizing zone in a vertical stack so that their like surfaces are parallel to one another and are face to face, setting distances of clearances between said wafers to approximately 5 mm or more;
- rotating said semiconductor-silicon wafers around an axis perpendicular to the wafer surface;
- and,
- introducing a reaction gas into said clearances by discharging essentially all of the reaction gas from discharging ports of a first gas-guiding means, said discharging ports located at a first position in the proximity of edges of the semiconductor-silicon wafers, said dischaging ports facing said clearances.
1 more element
Dependencies are inferred from the claim text.