Method of manufacturing semiconductor devices and semiconductor device capacitor manufactured thereby

A method of manufacturing a semiconductor device comprising:

• a) forming a contact hole in an insulating layer formed over a semiconductor substrate;
• b) forming a polysilicon layer on the insulating layer, the polysilicon layer burying the contact hole;
• c) forming a photoresist pattern on the polysilicon layer;
• d) forming a charge storage electrode by vertically etching a first portion of the polysilicon layer using the photoresist pattern as an etch mask, and obliquely etching a second portion of the polysilicon layer to form a tapered portion, a lower end of the tapered portion being wider than an upper end of the tapered portion and the lower end of the tapered portion covering the contact hole, said vertically etching creating an upper end of the tapered portion having substantially a same width as a corresponding contact hole;
• e) forming a dielectric layer on the storage electrode;
• and
• f) forming a plate electrode on the dielectric layer.

A method of manufacturing a semiconductor device comprising:

• a) forming contact holes in an insulating film formed over a semiconductor substrate;
• b) forming a conductive film on the insulating film, the conductive film burying the contact holes;
• c) forming a photoresist pattern on the conductive film;
• and
• d) obliquely etching the conductive film without a substantial vertical etch, including a top portion thereof to form a tapered portion, a lower end of the tapered portion being wider than an upper end of the tapered portion, and the lower end of the tapered portion covering the contact holes.