Nucleation and deposition of PT films using ultraviolet irradiation
AssigneeMicron Technology, Inc.
InventorEugene P. Marsh
Life of this patent
Estimating the term…
Abstract
A method of depositing a platinum based metal film by CVD deposition includes bubbling a non-reactive gas through an organic platinum based metal precursor to facilitate transport of precursor vapor to the chamber. The platinum based film is deposited onto a non-silicon bearing substrate in a CVD deposition chamber in the presence of ultraviolet light at a predetermined temperature and under a predetermined pressure. The film is then annealed in an oxygen atmosphere at a sufficiently low temperature to avoid oxidation of substrate. The resulting film is free of silicide and consistently smooth and has good step coverage.
Claims54
A method for depositing a platinum metal on a substrate comprising:
- depositing said platinum metal onto a substrate in a CVD deposition chamber at a predetermined temperature and pressure;
- irradiating the chamber interior with ultraviolet light;
- and
- annealing said substrate containing said deposited platinum metal in an oxygen atmosphere at a low temperature in the range of from about 150° C. to about 400° C.
A method for depositing a platinum metal on a substrate, comprising:
- introducing a substrate into a CVD deposition chamber;
- bubbling a gas through an organic platinum metal precursor;
- introducing said gas and said organic platinum metal precursor to said CVD deposition chamber;
- allowing said organic precursor to coat said substrate;
- irradiating said organic precursor with ultraviolet light in said CVD deposition chamber at a predetermined temperature and pressure for a predetermined time to decompose said organic precursor and form a platinum film onto said substrate;
- and
- annealing said substrate in an oxygen atmosphere at a low temperature in the range of from about 150° C. to about 400° C.
A method for depositing a platinum metal on a substrate, comprising:
- introducing a substrate into a CVD deposition chamber;
- introducing an organic platinum metal precursor to said CVD deposition chamber and irradiating said organic precursor with ultraviolet light in said CVD deposition chamber at a predetermined temperature and pressure for a predetermined time to decompose said organic precursor and form a platinum film onto said substrate;
- and
- annealing said substrate in an oxygen atmosphere at a low temperature in the range of from about 150° C. to about 400° C.
A method for depositing platinum onto a substrate, comprising the steps of:
- introducing a substrate into a CVD deposition chamber;
- bubbling a non-reactive gas through an organic platinum precursor selected from the group consisting of cyclopentadienyl trimethylplatinum (IV) and methylcyclopentadienyl trimethylplatinum CH3(C5H5)Pt(CH3)3;
- introducing said non-reactive gas and said organic platinum precursor to said CVD deposition chamber;
- irradiating said organic precursor with ultraviolet light in said CVD deposition chamber at a temperature of from −100° C. to about 150° C. and pressure of about 1 to about 10 Torr for about 30 to about 120 seconds to decompose said organic precursor and form a platinum group metal onto said substrate;
- and
- annealing said substrate in an oxygen atmosphere at a temperature of from 150° C. to about 400° C.
Dependencies are inferred from the claim text.