Method of depositing a smooth conformal aluminum film on a refractory metal nitride layer
AssigneeMicron Technology, Inc.
InventorsGilbert Lai, Gurtej S. Sandhu, Ravi Iyer, Brian A. Vaartstra
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Abstract
A method of forming a conformal aluminum film on a refractory metal nitride layer is provided and includes positioning a substrate having the refractory metal nitride layer thereon within a chemical vapor deposition chamber; establishing a nominal temperature for the substrate; introducing a carrier gas containing a gaseous, metalorganic precursor into the chamber for a time sufficient to form a metallic seed layer; and introducing a carrier gas containing a gaseous aluminum metalorganic precursor into the chamber for a time sufficient to form a conformal aluminum metal film over the metal refractory nitride layer.
Claims14
A method of forming an aluminum film on a refractory metal nitride layer comprising the steps of:
- positioning a substrate having said refractory metal nitride layer thereon within a chemical vapor deposition chamber;
- introducing a carrier gas containing a gaseous, substantially halogen-free metalorganic precursor into said chamber for a time sufficient to form a seed layer;
- and
- introducing a carrier gas containing a gaseous aluminum metalorganic precursor into said chamber for a time sufficient to form an aluminum metal film over said metal refractory nitride layer.
A method of forming an aluminum film on a refractory metal nitride surface comprising the steps of:
- placing a substrate having said refractory metal nitride surface thereon within a chemical vapor deposition chamber;
- introducing a carrier gas containing a gaseous, substantially halogen-free metalorganic precursor into said chamber to form a seed layer on said substrate;
- and
- without removing said substrate from said chamber, introducing a carrier gas containing a gaseous aluminum metalorganic precursor into said chamber for a time sufficient to form an aluminum metal film over said metal refractory nitride surface.
A method of forming an aluminum layer on a substrate comprising the steps of:
- providing a substrate having a refractory metal nitride surface thereon;
- placing said substrate within a chemical vapor deposition chamber;
- exposing said substrate to a substantially halogen-free metalorganic precursor to form an adsorbed seed layer on said refractory metal nitride surface;
- and
- exposing said substrate to an aluminum metalorganic precursor to form an aluminum metal film over said refractory metal nitride surface.
Dependencies are inferred from the claim text.