Method for high rate deposition of tungsten
AssigneeApplied Materials, Inc.
InventorsAlexander D. Glew, Andrew D. Johnson, Ravi Rajagopalan, Steve Ghanayem
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Abstract
A method and apparatus to control the deposition rate of a refractory metal film in a semiconductor fabrication process by controlling a quantity of ethylene present. The method includes placing a substrate in a deposition zone, of a semiconductor process chamber, flowing, into the deposition zone, a process gas including a refractory metal source, an inert carrier gas, and a hydrocarbon. Typically, the refractory metal source is tungsten hexafluoride, WF6, and the inert gas is argon, Ar. The ethylene may be premixed with either the argon or the tungsten hexafluoride to form a homogenous mixture. However, an in situ mixing apparatus may also be employed.
Claims15
A method for controlling a deposition rate of a refractory metal layer on a substrate positioned proximate to a deposition zone of a semiconductor process chamber, said method comprising:
- flowing, into said process chamber, a deposition gas including a refractory metal source and an inert carrier gas;
- maintaining said deposition zone at process conditions suitable for depositing said refractory metal layer on said substrate;
- and
- adding a selected amount of a source of hydrocarbons to said deposition gas in order to increase said deposition rate of said refractory metal layer.
A method for depositing a refractory metal layer on a substrate positioned proximate to a deposition zone of a semiconductor process chamber, said method comprising:
- flowing, into said process chamber, a process gas including a refractory metal source, an inert carrier gas, and a hydrocarbon;
- and
- maintaining said deposition zone at process conditions suitable for depositing said refractory metal layer,
- wherein a quantity of said hydrocarbon is between about 100 and 10,000 parts per billion parts of said process gas.
A method for depositing a tungsten layer on a substrate positioned proximate to a deposition zone of a semiconductor process chamber, said method comprising:
- flowing a deposition gas including tungsten-hexafluoride, a reducing agent, and an inert carrier gas into said process chamber;
- and
- adding ethylene to said deposition gas to increase a deposition rate of said tungsten layer for a given set of process conditions suitable for depositing said tungsten layer.
Dependencies are inferred from the claim text.