Method for manufacturing semiconductor device having metal silicide film and metal film in which metal film can be selectively removed
AssigneeNEC Corporation
InventorTetsuya Taguwa
Life of this patent
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Abstract
In order to prevent a thick metal nitride film formed in a contact hole or a through-hole and on an insulating film to bury the hole from being cracked of peeled off, a method for easily removing unnecessary metal film on the insulating film while leaving a metal silicide film formed in the hole is provided. The method comprises the steps of depositing a titanium film in the hole formed in the insulating film and on the insulating film by CVD, forming the metal silicide film by a reaction between the titanium film on a bottom of the hole and a semiconductor substrate and, then, selectively removing unnecessary metal film other than the metal silicide film by using an etching gas containing halogen.
Claims4
A manufacturing method of semiconductor device, having a metal silicide film and a metal film formed in a first region and a second region of a semiconductor substrate of said semiconductor device, respectively, comprising selectively removing said metal film by simultaneously exposing said metal film and said metal silicide film to an etching gas containing halogen,
- wherein said metal film is a titanium film and said metal silicide film is a titanium silicide film, and
- wherein said etching gas is a gas containing titanium tetrachloride.
A manufacturing method of semiconductor device, comprising:
- forming an insulating film on a semiconductor substrate;
- forming an opening portion in said insulating film such that said semiconductor substrate is exposed;
- depositing a metal film in said opening portion and on said insulating film;
- forming a metal silicide film by a reaction of said metal film deposited in said opening portion and said semiconductor substrate;
- and
- selectively removing said metal film by simultaneously exposing said metal film and said metal silicide film to an etching gas containing halogen,
- wherein said metal film is a titanium film and said metal silicide film is a titanium suicide film, and
- wherein said etching gas is a gas containing titanium tetrachloride.
A manufacturing method of semiconductor device, comprising:
- forming an insulating film on a semiconductor substrate;
- forming an opening portion in said insulating film such that said semiconductor substrate is exposed;
- depositing a titanium film in said opening portion and on said insulating film while forming a metal silicide film by a reaction of said titanium film deposited in said opening portion and said semiconductor substrate;
- and
- selectively removing said titanium film which is not reacted, by simultaneously exposing said titanium film and said metal silicide film to an etching gas containing halogen,
- wherein said titanium film is formed by chemical vapor deposition and a gas used for the chemical vapor deposition and said etching gas are a mixture gas containing titanium chloride.
A manufacturing method of semiconductor device, having a metal silicide film and a metal film formed in a first region and a second region of a semiconductor substrate of said semiconductor device, respectively, comprising selectively removing said metal film by simultaneously exposing said metal film and said metal silicide film to an etching gas containing halogen,
- wherein said metal silicide film and said metal film are formed by plasma CVD using the same gas as said etching gas as a material gas, and wherein said selectively removing said metal film is performed without generating plasma.
Dependencies are inferred from the claim text.