Back to results
US 6,204,168 B1Granted
Damascene structure fabricated using a layer of silicon-based photoresist material
AssigneeApplied Materials, Inc.
InventorsMehul B. Naik, Tim Weidman, Dian Sugiarto, Allen Zhao
Life of this patent
Estimating the term…
Abstract
A damascene structure, and a method of fabricating same, containing relatively low dielectric constant materials (e.g., k less than 3.8). A silicon-based, photosensitive material, such as plasma polymerized methylsilane (PPMS), is used to form both single and dual damascene structures containing low k materials. During the manufacturing process that forms the damascene structures, the silicon-based photosensitive material is used as both a hard mask and/or an etch stop.
Claims9
A method of fabricating a damascene structure comprising the steps of:
- providing a substrate;
- depositing a first insulative layer upon said substrate;
- depositing a first layer of silicon-based photosensitive material upon said first insulative layer;
- patterning said first layer of silicon-based photosensitive material to define a via in said first silicon-based photosensitive material layer;
- depositing a second insulative layer upon said patterned first layer of silicon-based photosensitive material;
- depositing a second layer of silicon-based photosensitive material atop said second insulative layer;
- patterning said second layer of silicon-based photosensitive material to define a trench in said second silicon-based photosensitive material layer;
- etching said second insulative layer to transfer the trench therein, wherein the first layer of silicon-based photosensitive material functions as an etch stop for defining the trench in the second insulative layer;
- and
- etching the first insulative layer to transfer the via therein, wherein the first layer of silicon-based photosensitive material functions as a hard mask for defining the via in the first insulative layer.
7 more elements
Dependencies are inferred from the claim text.