Method for establishing shallow junction in semiconductor device to minimize junction capacitance
AssigneeAdvanced Micro Devices, Inc.
InventorEffiong Ibok
Life of this patent
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Abstract
A method for making a semiconductor device including a silicon substrate includes implanting Nitrogen into the substrate after gate stack formation and before source/drain pant implantation. The Nitrogen is implanted and then annealed as appropriate to establish shallow junction regions and minimal overlap regions in the substrate. Then, the source/drain dopant is implanted and activated, with the dopant essentially being constrained by the Nitrogen to remain concentrated in the shallow junction and minimal overlap regions, thereby minimizing junction capacitance and overlap capacitance in the finished device and consequently improving the speed of operation of the device.
Claims5
A method for fabricating a semiconductor device, the semiconductor device including a substrate, the method comprising:
- establishing plural transistor gate stacks on the substrate such that at least one prospective junction region is defined in the substrate between two adjacent stacks, the prospective junction region defining a desired lower bound;
- disposing Nitrogen into the prospective junction region;
- annealing the substrate to cause the Nitrogen to agglomerate at a depth greater than the desired lower bound;
- implanting dopant into the prospective junction region;
- then
- annealing the substrate to activate dopant.
Dependencies are inferred from the claim text.