Semiconductor device and production thereof
AssigneeHitachi, Ltd.
InventorsHideo Miura, Shunji Moribe, Hisayuki Kato, Atsuyoshi Koike, Shuji Ikeda, Asao Nishimura
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Abstract
A semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columnar structure and a crystal orientation of individual crystal grains is almost in a uniform direction can be produced by depositing a non-impurity-doped silicon thin film or an impurity layer on an interface of underlying film, followed by deposition of impurity-doped silicon thin film, if necessary, followed by heat treatment for polycrystallization.
Claims10
A process for producing a semiconductor device, which comprises forming an underlying film on a semiconductor substrate, and forming a silicon thin film on the underlying film by depositing a silicon film having no impurity from a SiH4 gas or a Si2H6 gas to a thickness of 1 nm or more, followed by deposition of the silicon film doped with an impurity selected from group III and V elements.
A process for producing a semiconductor device, which comprises forming an underlying film on a semiconductor substrate, and forming an amorphous silicon thin film on the underlying film by depositing a silicon film having no impurity from a SiH4 gas or a Si2H6 gas to a thickness of 1 nm or more, followed by deposition of the silicon film doped with an impurity selected from group III and V elements, and heat treating the amorphous silicon thin film to give a polycrystalline silicon thin film.
A process for producing a silicon thin film, which comprises introducing into a reaction chamber a raw material gas selected from SiH4 gas and Si2H6 gas to deposit a silicon film having no impurity to a thickness of 1 nm or more, followed by introduction of an impurity gas selected from group III and V elements together with the raw material gas to deposit a silicon film doped with the impurity.
A process for producing a silicon thin film, which comprises introducing into a reaction chamber a raw material gas selected from SiH4 gas and Si2H6 gas to deposit an amorphous silicon film having no impurity to a thickness of 1 nm or more, followed by introduction of an impurity gas selected from group III and V elements together with the raw material gas to deposit an amorphous silicon film doped with the impurity, and heat treating the amorphous silicon thin film to finally provide a polycrystalline silicon thin film.
Dependencies are inferred from the claim text.