Method for patterning semiconductors with high precision, good homogeneity and reproducibility
AssigneeSiCED Electronics Development GmbH & Co. KG
InventorsDethard Peters, Reinhold Schörner
Life of this patent
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Abstract
A thin-film system is deposited onto a surface of a semiconductor region. After at least one window has been opened in the thin-film system, the window serves as a mask for a first selective processing of a first semiconductor partial region. By undercutting the thin-film system, the edge of the window is drawn back approximately uniformly by a mean undercutting depth. The at least one enlarged window serves as a mask for a second selective processing of a second semiconductor partial region. A semiconductor structure is also provided.
Claims19
A method for fabricating semiconductor structures, the method which comprises:
- depositing a thin-film system onto a surface of a semiconductor region, the thin-film system including a partial layer formed of an oxide material and directly adjoining the surface of the semiconductor region;
- etching a window into the thin-film system with an etching method, the window extending to the surface of the semiconductor region;
- using the window in the thin-film system for a first selective processing of a partial region of the semiconductor region;
- using an undercutting process for enlarging the window by moving back, in the partial layer, an edge of the window approximately uniformly by an amount corresponding to a mean undercutting depth in a plane of the partial layer;
- and
- subsequently utilizing the window for a second selective processing of a further partial region of the semiconductor region.
A semiconductor structure, comprising:
- a semiconductor material including a semiconductor region having a surface, a first partial region, and a second partial region;
- a thin-film system disposed on said surface of said semiconductor region, said thin-film system including a partial layer formed of an oxide material directly adjoining said surface of said semiconductor region;
- said thin-film system being formed with a window extending to said surface of said semiconductor region for allowing said first partial region to be processed by a first selective processing;
- and
- said thin film system being formed with an undercut in said partial layer for allowing said second partial region to be processed by a second selective processing.
Dependencies are inferred from the claim text.