US 6,204,104 B1Granted

Semiconductor device and manufacturing method thereof

AssigneeNEC Corporation

InventorHiroki Fujii

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Abstract

A semiconductor device having a capacitor, a bipolar transistor and complementary MOSFETs on a semiconductor substrate, the capacitor being constituted from a first electrode 8, a second electrode 13 separated from the first electrode by an insulating film 11 and a third electrode 15 separated from the second electrode by another insulating film 14 and connected to the first electrode is manufactured; where all electrodes in the capacitor and insulating films between them are formed simultaneously with other manufacturing steps of a bipolar transistor or the MOSFETs. This manufacturing method can produce a semiconductor device such as a Bi—CMOS and the like, which is capable of large scale integration and has a capacitor with a large capacitance but occupying only a small area, with a high efficiency and a low cost.

Claims7

Dependent claims

A method of manufacturing a semiconductor device having a capacitor, a bipolar transistor and complementary MOSFETs on a semiconductor substrate;

the capacitor comprising a first electrode a second electrode separated from the first electrode by a first insulating film and a third electrode separated from the second electrode by a second insulating film and connected to the first electrode;
which comprises the steps of:
forming the first electrode simultaneously with forming gate electrodes of the MOSFETS;
forming the first insulating film between the first electrode and the second electrode simultaneously with forming an insulating film which prevents source-drain regions of the MOSFETs and a collector bring-out region of the bipolar transistor from being etched, when a base electrode is worked into shape by etching;
forming the second electrode simultaneously with forming a base electrode of the bipolar transistor;
forming the second insulating film between the second electrode and the third electrode simultaneously with forming an insulating film which insulates between a base electrode and an emitter electrode of the bipolar transistor;
and
forming the third electrode simultaneously with forming the emitter electrode of the bipolar transistor, wherein the first electrode and third electrode are joined together by means of a through hole which is opened around the center of the second electrode at the same time of making an opening for formation of an emitter electrode through a base electrode in a section of a bipolar transistor;
and
an electric contact is formed as a ring within an interlayer insulating film overlying the capacitor so as to touch the circumference of the second electrode.

7 more elements

A method of manufacturing a semiconductor device having a capacitor, a bipolar transistor and complementary MOSFETs on a semiconductor substrate;

the capacitor comprising a first electrode, a second electrode separated from the first electrode by a first insulating film, a third electrode separated from the second electrode by a second insulating film and connected to the first electrode and a fourth electrode formed in the semiconductor substrate, separated from the first electrode by a third insulating film and connected to the second electrode;
which comprises the steps of:
forming the fourth electrode simultaneously with forming a collector electrode of the bipolar transistor;
forming the first electrode simultaneously with forming gate electrodes of the MOSFETS;
forming the first insulating film between the first electrode and the second electrode simultaneously with forming an insulating film which prevents source-drain regions of the MOSFETs and a collector bring-out region of the bipolar transistor from being etched, when a base electrode is worked into shape by etching;
forming the second electrode simultaneously with forming a base electrode of the bipolar transistor;
forming the second insulating film between the second electrode and the third electrode simultaneously with forming an insulating film which insulates between a base electrode and an emitter electrode of the bipolar transistor;
and
forming the third electrode simultaneously with forming the emitter electrode of the bipolar transistor.

6 more elements

Dependencies are inferred from the claim text.