Method for producing insulated gate thin film semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsNaoto Kusumoto, Shunpei Yamazaki
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Abstract
An amorphous semiconductor film is etched so that a width of a narrowest portion thereof is 100 μm or less, thereby forming island semiconductor regions. By irradiating an intense light such as a laser into the island semiconductor regions, photo-annealing is performed to crystallize it. Then, of end portions (peripheral portions) of the island semiconductor regions, at least a portion used to form a channel of a thin film transistor (TFT), or a portion that a gate electrode crosses is etched, so that a region that the distortion is accumulated is removed. By using such semiconductor regions, a TFT is produced.
Claims80
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- irradiating said semiconductor layer with a linear laser beam generated from a second harmonic component of an Nd:YAG laser to crystallize said semiconductor layer,
- wherein a concentration of carbon in the crystallized semiconductor layer is not higher than 5×1018 atoms/cm3.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- irradiating said semiconductor layer with a linear laser beam to crystallize said semiconductor layer,
- wherein said laser beam is a third harmonic component of an Nd:YAG laser with a wavelength of 355 nm.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- irradiating said semiconductor layer with a linear laser beam to crystallize said semiconductor layer,
- wherein said laser beam is a harmonic component of an Nd:YAG laser, and a concentration of carbon or nitrogen in the crystallized semiconductor film is not higher than 5×1018 atoms/cm3.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- irradiating said semiconductor layer with a linear laser beam to crystallize said semiconductor layer;
- etching the crystallized semiconductor layer to form an active layer of the semiconductor device;
- forming a gate insulating film on the active layer;
- forming a gate electrode over the active layer with said gate insulating film interposed therebetween;
- and
- selectively introducing ions of an impurity into portions of the active layer to form impurity regions in said active layer,
- wherein said laser beam is a second harmonic component of an Nd:YAG laser, and a concentration of carbon in the crystallized semiconductor film is not higher than 5×1018 atoms/cm3.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- irradiating said semiconductor layer with a linear laser beam to crystallize said semiconductor layer;
- etching the crystallized semiconductor layer to form an active layer of the semiconductor device;
- forming a gate insulating film on the active layer;
- forming a gate electrode over the active layer with said gate insulating film interposed therebetween;
- and
- selectively introducing ions of an impurity into portions of the active layer to form impurity regions in said active layer,
- wherein said laser beam is a third harmonic component of an Nd:YAG laser with a wavelength of 355 nm.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- irradiating said semiconductor layer with a linear laser beam to crystallize said semiconductor layer;
- etching the crystallized semiconductor layer to form an active layer of the semiconductor device;
- forming a gate insulating film on the active layer;
- forming a gate electrode over the active layer with said gate insulating film interposed therebetween;
- and
- selectively introducing ions of an impurity into portions of the active layer to form impurity regions in said active layer,
- wherein said laser beam is a harmonic component of an Nd:YAG laser, and a concentration of carbon or nitrogen in the crystallized semiconductor film is not higher than 5×1018 atoms/cm3.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- irradiating said semiconductor layer with a linear laser beam to crystallize said semiconductor layer,
- wherein said laser beam is a second harmonic component of an Nd:YAG laser and a concentration of nitrogen in the crystallized semiconductor film is not higher than 5×1018 atoms/cm3.
A method according to claim 34 or 41 wherein said concentration is determined by secondary ion mass spectroscopy.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- irradiating said semiconductor layer with a linear laser beam to crystallize said semiconductor layer,
- wherein said laser beam is a second harmonic component of an Nd:YAG laser and a concentration of oxygen in the crystallized semiconductor film is not higher than 5×1019 atoms/cm3.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- irradiating said semiconductor layer with a linear laser beam to crystallize said semiconductor layer,
- wherein said laser beam is a harmonic component of an Nd:YAG laser, a concentration of oxygen in the crystallized semiconductor film is not higher than 5×1019 atoms/cm3.
A method according to claim 49 wherein said concentration is determined by secondary ion mass spectroscopy.
A method according to claim 49 wherein said semiconductor film comprises amorphous silicon.
A method according to claim 49 wherein said semiconductor film comprises silicon and germanium.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- irradiating said semiconductor layer with a linear laser beam to crystallize said semiconductor layer;
- etching the crystallized semiconductor layer to form an active layer of the semiconductor device;
- forming a gate insulating film on the active layer;
- forming a gate electrode over the active layer with said gate insulating film interposed therebetween;
- and selectively introducing ions of an impurity into portions of the active layer to form impurity regions in said active layer,
- wherein said laser beam is a second harmonic component of an Nd:YAG laser, and a concentration of nitrogen in the crystallized semiconductor film is not higher than 5×1018 atoms/cm3.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- irradiating said semiconductor layer with a linear laser beam to crystallize said semiconductor layer;
- etching the crystallized semiconductor layer to form an active layer of the semiconductor device;
- forming a gate insulating film on the active layer;
- forming a gate electrode over the active layer with said gate insulating film interposed therebetween;
- and
- selectively introducing ions of an impurity into portions of the active layer to form impurity regions in said active layer,
- wherein said laser beam is a second harmonic component of an Nd:YAG laser, and a concentration of oxygen in the crystallized semiconductor film is not higher than 5×1019 atoms/cm3.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- irradiating said semiconductor layer with a linear laser beam to crystallize said semiconductor layer;
- etching the crystallized semiconductor layer to form an active layer of the semiconductor device;
- forming a gate insulating film on the active layer;
- forming a gate electrode over the active layer with said gate insulating film interposed therebetween;
- and
- selectively introducing ions of an impurity into portions of the active layer to form impurity regions in said active layer,
- wherein said laser beam is a harmonic component of an Nd:YAG laser, and a concentration of oxygen in the crystallized semiconductor film is not higher than 5×1019 atoms/cm3.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- irradiating said semiconductor layer with a linear laser beam to crystallize said semiconductor layer,
- wherein said laser beam is a second harmonic component of a laser with a wavelength of 532 nm and a concentration of carbon in the crystallized semiconductor film is not higher than 5×1018 atoms/cm3.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- irradiating said semiconductor layer with a linear laser beam to crystallize said semiconductor layer,
- wherein said laser beam is a second harmonic component of a laser with a wavelength of 532 nm and a concentration of nitrogen in the crystallized semiconductor film is not higher than 5×1018 atoms/cm3.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- irradiating said semiconductor lay er with a linear laser beam to crystallize said semiconductor layer,
- wherein said laser beam is a second harmonic component of a laser with a wavelength of 532 nm and a concentration of oxygen in the crystallized semiconductor film is not higher than 5×1019 atoms /cm3.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- irradiating said semiconductor layer with a linear laser beam to crystallize said semiconductor layer,
- wherein said laser beam is a third harmonic component of a laser with a wavelength of 355 nm and a concentration of carbon in the crystallized semiconductor film is not higher than 5×1018 atoms/cm3.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- irradiating said semiconductor layer with a linear laser beam to crystallize said semiconductor layer,
- wherein said laser beam is a third harmonic component of a laser with a wavelength of 355 nm and a concentration of nitrogen in the crystallized semiconductor film is not higher than 5×1018 atoms/cm3.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- irradiating said semiconductor layer with a linear laser beam to crystallize said semiconductor layer,
- wherein said laser beam is a third harmonic component of a laser with a wavelength of 355 nm and a concentration of oxygen in the crystallized semiconductor film is not higher than 5×1019 atoms/cm3.
Dependencies are inferred from the claim text.