Method of formation in a silicon wafer of an insulated well
AssigneeSTMicroelectronics S.r.l.
InventorChristine Anceau
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Abstract
A method of forming an insulated well in an upper portion of a silicon substrate, including the steps of providing a structure of silicon-on-insulator type including a silicon substrate, an insulating layer, and a thin single-crystal silicon layer; removing the insulating layer and the thin silicon layer outside locations where the insulated well is desired to be formed; growing an epitaxial layer; performing a planarization; and making a vertical insulating wall above the periphery of the maintained portion of the thin insulating layer.
Claims8
A method of forming an insulated well in an upper portion of a silicon substrate, including the steps of:
- providing a structure of silicon-on-insulator type including a silicon substrate, an insulating layer, and a thin single-crystal silicon layer;
- removing the insulating layer and the thin silicon layer outside locations where the insulated well is desired to be formed;
- growing an epitaxial layer on all the upper surface of the structure, to form an active layer of the wells and an upper layer of power components outside the region corresponding to the well;
- performing a planarization;
- and
- making a vertical insulating wall above the periphery of the maintained portion of the thin insulating layer.
Dependencies are inferred from the claim text.