Nitride system semiconductor device and method for manufacturing the same

A method of manufacturing a nitride system semiconductor device, comprising the steps of:

• forming an n-type InxGayAlzB1-x-y-zNmPnAs1-m-n (0≦x, 0≦y, 0≦z, 0≦x+y+z≦1.0≦m, 0≦n, 0≦m+n≦1) layer overlying a substrate;
• forming at least a p-type InxGayAlzB1-x-y-zNmPnAs1-m-n (0≦x, 0≦y, 0≦z, 0≦x+y+z≦1.0≦m, 0≦n, 0≦m+n≦1) layer, after said n-type InxGayAlzB1-x-y-zNmPnAs1-m-n layer is formed;
• forming a p-side electrode overlying said p-type InxGayAlzB1-x-y-zNmPnAs1-m-n layer;
• and
• said p-type InxGayAlzB1-x-y-zNmPnAs1-m-n layer being formed using at least both a material gas containing an organic magnesium compound and ammonia and a carrier gas, which is essentially a nitrogen gas and a hydrogen gas,
• wherein said nitrogen gas has a flow rate which is 5 to 2000 times as high as that of said hydrogen gas.

A method of manufacturing a nitride system semiconductor device, comprising the steps of:

• forming an n-type InxGayAlzB1-x-y-zNmPnAs1-m-n (0≦x, 0≦y, 0≦z, 0≦x+y+z≦1, 0≦m, 0≦n, 0≦m+n≦1) layer overlying a substrate;
• forming at least a p-type InxGayAlzB1-x-y-zNmPnAs1-m-n (0≦x, 0≦y, 0≦z, 0≦x+y+z≦1, 0≦m, 0≦n, 0≦m+n≦1) layer, after said n-type InxGayAlzB1-x-y-zNmPnAs1-m-n layer is formed;
• forming a p-side electrode overlying said p-type InxGayAlzB1-x-y-zNmPnAs1-m-n layer;
• and
• said p-type InxGayAlzB1-x-y-zNmPnAs1-m-n layer being formed using at least both a material gas containing an organic magnesium compound and ammonia and a carrier gas, which is essentially a nitrogen gas and a hydrogen gas,
• wherein said p-type InxGayAlzB1-x-y-zNmPnAs1-m-n layer has an oxygen concentration of 5×1018 cm−3 or less in close vicinity to a surface thereof.

A method of manufacturing a nitride system semiconductor device, comprising the steps of:

• forming an n-type InxGayAlzB1-x-y-zNmPnAs1-m-n (0≦x, 0≦y, 0≦z, 0≦x+y+z≦1, 0≦m, 0≦n, 0≦m+n≦1) layer overlying a substrate;
• forming at least a p-type InxGayAlzB1-x-y-zNmPnAs1-m-n (0≦x, 0≦y, 0≦z, 0≦x+y+z≦1, 0≦m, 0≦n, 0≦m+n≦1) layer, after said n-type InxGayAlzB1-x-y-zNmPnAs1-m-n layer is formed;
• forming a p-side electrode overlying said p-type InxGayAlzB1-x-y-zNmPnAs1-m-n layer;
• and
• said p-type InxGayAlzB1-x-y-zNmPnAs1-m-n layer being formed using at least both a material gas containing an organic magnesium compound and ammonia and a carrier gas, which is essentially a nitrogen gas and a hydrogen gas,
• wherein said p-type InxGayAlzB1-x-y-zNmPnAs1-m-n layer has an oxygen concentration of 1×1018 cm−3 or less in close vicinity to a surface thereof.

A method of manufacturing a nitride system semiconductor device, comprising the steps of:

• forming an n-type InxGayAlzB1-x-y-zNmPnAs1-m-n (0≦x, 0≦y, 0≦z, 0≦x+y+z≦1, 0≦m, 0≦n, 0≦m+n≦1) layer overlying a substrate;
• forming at least a p-type InxGayAlzB1-x-y-zNmPnAs1-m-n (0≦x, 0≦y, 0≦z, 0≦x+y+z≦1, 0≦m, 0≦n, 0≦m+n≦1) layer, after said n-type InxGayAlzB1-x-y-zNmPnAs1-m-n layer is formed;
• forming a p-side electrode overlying said p-type InxGayAlzB1-x-y-zNmPnAs1-m-n layer;
• and
• said p-type InxGayAlzB1-x-y-zNmPnAs1-m-n layer being formed using at least both a material gas containing an organic magnesium compound and ammonia and a carrier gas, which is essentially a nitrogen gas and a hydrogen gas,
• wherein said p-type InxGayAlzB1-x-y-zNmPnAs1-m-n layer has an oxygen concentration of 5×1017 cm−3 or less in close vicinity to a surface thereof.