Method of fabricating row lines of a field emission array and forming pixel openings therethrough

A method of fabricating row lines on a field emission array, comprising:

• forming a conductive layer on a planarized semiconductor grid having pixel openings positioned above emitter tips of the field emission array;
• forming a passivation layer on the conductive layer;
• removing at least portions of said semiconductor grid, said conductive layer, and said passivation layer disposed between adjacent rows of pixels of the field emission array;
• and
• removing other portions of said passivation layer and said conductive layer from above said pixels to define pixel openings.

A method of fabricating row lines of a field emission array, comprising:

• placing a first layer with conductive material over a semiconductor layer located above emitter tips of the field emission array;
• placing a second layer with passivation material over said first layer;
• positioning a first mask with at least one first aperture therethrough over the field emission array, said at least one first aperture being aligned substantially over a pixel of the field emission array;
• removing at least a region of said second layer exposed through said at least one first aperture;
• removing at least a region of said first layer exposed through said second layer to expose said pixel;
• positioning a second mask with at least one second aperture over the field emission array, said second mask shielding at least row line regions of said conductive layer, said at least one second aperture being aligned adjacent at least one row line region of said conductive layer;
• and
• removing regions of said second layer, said first layer, and said semiconductor layer below said at least one second aperture.