Method for manufacturing ferroelectric capacitor

A method for manufacturing a ferroelectric capacitor comprising the steps of:

• forming a bottom electrode over a semiconductor substrate;
• forming a ferroelectric material film over the bottom electrode;
• forming a first diffusion barrier film over the ferroelectric material film using TiO2;
• forming a second diffusion barrier film over said first diffusion barrier film using silicon nitride;
• forming a contact hole to expose a part of the ferroelectric material film by removing portions of the first and the second diffusion barrier films;
• and
• forming a top electrode to couple the ferroelectric material film to the bottom electrode through the contact hole.

A method for manufacturing ferroelectric capacitor comprising the steps of:

• forming a bottom electrode over a semiconductor substrate;
• forming a ferroelectric material film over the bottom electrode;
• patterning said ferroelectric material film and said bottom electrode;
• forming a stress buffer film over the patterned ferroelectric material film using silicon dioxide;
• forming a diffusion barrier film over the stress buffer film using silicon nitride;
• forming a contact hole exposing a part of the ferroelectric material film by patterning said diffusion barrier film and said stress buffer film;
• and
• forming a top electrode coupled to the ferroelectric material film through the contact hole.