Processing systems with dual ion sources
AssigneeIntevac, Inc.
InventorsTerry Bluck, James H. Rogers, Sean P. McGinnis
Life of this patent
Estimating the term…
Abstract
A substrate processing system includes a processing chamber, a substrate holder positioned in the chamber, a gas source for supplying a process gas to the chamber, first and second ion sources located in the chamber, and a power source for energizing the first and second ion sources. Each ion source ionizes the process gas to produce ions for processing a substrate disposed on the substrate holder. The first and second ion sources include first and second anodes, respectively. The power source energizes the first and second anodes in a time multiplexed manner, such that only one of the first and second ion sources is energized at any time and interactions between ion sources are eliminated.
Claims31
A substrate processing system comprising:
- a processing chamber;
- a substrate holder positioned in said processing chamber;
- a gas source coupled to said processing chamber for supplying a process gas to said processing chamber;
- a first ion source in said chamber for ionizing said process gas to produce ions for processing a substrate disposed on said substrate holder, said first ion source comprising a first anode and a first electron source;
- a second ion source in said chamber for ionizing said process gas to produce ions for processing the substrate, said second ion source comprising a second anode and a second electron source;
- and
- a power source for energizing said first anode and said second anode in a time multiplexed manner such that only one of said first and second ion sources is energized at any time.
A method for processing a substrate, comprising the steps of:
- positioning a substrate in a processing chamber;
- supplying a process gas to the processing chamber;
- ionizing said process gas with a first ion source located in said chamber to produce ions of said process gas for processing the substrate, said first ion source comprising a first anode and a first electron source;
- ionizing said process gas with a second ion source located in said chamber to produce ions of said process gas for processing the substrate, said second ion source comprising a second anode and a second electron source;
- and
- energizing said first anode and said second anode such that only one of said first and second ion sources is energized at any time.
A method for operating two or more ion sources in a processing chamber, said two or more ion sources each having an anode, comprising the step of:
- energizing the anodes of said two or more ion sources in a time multiplexed manner such that only one of said two or more ion sources is energized at any time.
A substrate processing system comprising:
- a processing chamber;
- a substrate holder positioned in said processing chamber;
- a gas for supplying a process gas to said processing chamber;
- first and second anodes positioned in said processing chamber;
- an electron source in said chamber for producing electrons in regions of said first and second anodes for ionizing said process gas to produce ions for processing a substrate disposed on the substrate holder;
- and
- a power source for energizing said first and second anodes in a time multiplexed manner such that only one of said anodes is energized at any time.
A processing system to process the two surfaces of a thin electrically conductive substrate at a processing station comprising:
- a processing chamber;
- a substrate holder positioned in said processing chamber;
- a source of gas coupled to said processing chamber to feed gas into said chamber on surface sides of a substrate on said substrate holder;
- a power source and first and second plasma generators, each said plasma generator positioned on a surface side of a substrate on said substrate holder to generate a plasma thereat;
- said power source connected to said first and second plasma generators to energize said plasma generators in a time multiplexed manner such that only one of said plasma generators is energized at any one time;
- and,
- a power source connected to said substrate holder to electrically bias a substrate on said holder.
A substrate processing system comprising:
- a processing chamber;
- a substrate holder positioned in said processing chamber;
- a gas source coupled to said processing chamber to supply process gases to said processing chamber;
- a first plasma generator in said chamber connected to a power source for ionizing said process gas to produce ions for processing a substrate disposed on said substrate holder;
- a second plasma generator in said chamber connected to a power source for ionizing said process gas to produce ions for processing a substrate disposed on said substrate holder;
- each of said plasma generators being disposed on opposite sides of the surfaces of a substrate on said substrate holder;
- a power source for energizing in a time multiplexed manner such that only one of said generators is energized at any one time;
- and
- an electrical source connected to said substrate holder to bias a substrate disposed on said holder for processing.
Dependencies are inferred from the claim text.