Continuous forming method for TI/TIN film

A method of continuously forming a Ti/TiN film by sputtering from a common target onto a substrate disposed in a pressurizable process chamber in communication with a source of N2, the method comprising the following steps:

• a) sputtering a Ti film onto the substrate;
• b) introducing a flow rate of N2 gas in the chamber to greater than 40 sccm to increase a pressure in the chamber to greater than about 4.0 mTorr while applying no sputtering power;
• c) controlling the flow rate of N2 gas and the pressure in the chamber to define a first branch of a hysteresis by reducing the flow rate of N2 gas in the chamber through a range from about 40 sccm to about 20 sccm and reducing the pressure in the chamber through a range from about 4.0 mTorr to about 2.5 mTorr and applying sputtering power to sputter a nitride mode TiN film on the target;
• d) reducing the flow rate of N2 gas to less than 20 sccm and decreasing the pressure to less than 2.5 mTorr;
• e) controlling the flow rate of N2 gas and the pressure in the chamber to define a second branch of the hysteresis by increasing the flow rate of N2 gas through a range from about 20 to about 40 sccm and increasing the pressure through a range from about 2.5 mTorr to about 4 mTorr and applying sputtering power to sputter a metallic mode TiN film on the target;
• wherein the first branch of the hysteresis follows a path that is at a higher pressure than a path for the second branch of the hysteresis.

A method of continuously forming a Ti/TiN film by sputtering from a common target onto a substrate disposed in a pressurizable process chamber in communication with a source of N2 and a source of inert gas, the method comprising the following steps:

• a) introducing a flow rate of inert gas into the chamber and sputtering a Ti film on the substrate;
• b) reducing the flow rate of inert gas and introducing a flow rate of N2 gas in the chamber and increasing a pressure in the chamber to greater than 4.0 mTorr while applying no sputtering power;
• c) controlling the flow rate of N2 gas and the pressure in the chamber to define a first branch of a hysteresis by reducing the flow rate of N2 gas in the chamber and reducing the pressure in the chamber through a range from about 4.0 mTorr to about 2.5 mTorr and applying sputtering power to sputter a nitride mode TiN film on the substrate;
• d) reducing the flow rate of N2 gas and decreasing the pressure to less than 2.5 mTorr;
• e) controlling the flow rate of N2 gas and the pressure in the chamber to define a second branch of the hysteresis by increasing the flow rate of N2 gas and increasing the pressure through a range from about 2.5 mTorr to about 4 mTorr and applying sputtering power to sputter a metallic mode TiN film on the substrate;
• f) stopping the flow rate of N2 gas and increasing the flow rate of inert gas and sputtering a second Ti film on the substrate;
• wherein the first branch of the hysteresis follows a path that is at a higher pressure than a path for the second branch of the hysteresis.