Plasma apparatus for fabricating semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorsKiw-sang Kim, Young-min Min, In-sung Park
Life of this patent
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Abstract
A plasma apparatus for fabricating a semiconductor device, is provided. This plasma apparatus includes a grounded chamber for providing a space where a predetermined process is to be performed, a chuck mounted within the chamber and insulated from the chamber, a gas injection ring installed around the sidewall of the chuck, an induction plasma power source connected to the chuck, a system controller for controlling the induction plasma power source, and a capacitance compensator for keeping the total chuck capacitance between the chuck and a ground terminal at a constant value. The gas injection ring is separated from the chuck by a predetermined distance and is electrically connected to the chamber.
Claims20
A plasma apparatus, comprising:
- performed;
- a chuck mounted in the chamber and insulated from the chamber;
- a chuck plasma power source connected to the chuck;
- a system controller for outputting a signal for controlling the chuck plasma power source;
- and
- a capacitance compensator for keeping the total chuck capacitance between the chuck and a ground terminal at a constant value,
- wherein the capacitance compensator comprises:
- a variable capacitor portion connected between the chuck and the ground terminal and comprising at least one variable capacitor;
- and
- a variable capacitor controller for controlling the capacitance of the variable capacitor,
- wherein the variable capacitor controller comprises:
- a motive power source for changing a gap between electrodes of the variable capacitor;
- a capacitance meter for measuring the total chuck capacitance between the chuck and the ground terminal and outputting an electrical signal corresponding to the measured total chuck capacitance;
- an automatic control signal generator for outputting an electrical signal corresponding to the difference between the output signal of the capacitance meter and a reference signal that corresponds to an optimal total chuck capacitance input to the system controller;
- and
- a driver portion for driving the motive power source by amplifying the output signal of the automatic control signal generator.
A plasma apparatus, comprising:
- a grounded chamber having a space where a predetermined process may be performed;
- a chuck mounted in the chamber and insulated from the chamber;
- a chuck plasma power source connected to the chuck;
- a system controller for outputting a signal for controlling the chuck plasma power source;
- and
- a capacitance compensator for keeping the total chuck capacitance between the chuck and a ground terminal at a constant value,
- wherein the capacitance compensator comprises:
- a variable capacitor portion connected between the chuck and the ground terminal and comprising at least one variable capacitor;
- and
- a variable capacitor controller for controlling the capacitance of the variable capacitor,
- wherein the variable capacitor controller comprises:
- a motive power source for changing a gap between electrodes of the variable capacitor;
- a capacitance meter for measuring the total chuck capacitance between the chuck and a ground terminal and outputting an electrical signal corresponding to the measured total chuck capacitance to the system controller;
- a manual control signal generator for generating an arbitrary voltage between positive and negative power source voltages;
- and
- a driver portion for driving the motive power source by amplifying the output signal of the manual control signal generator.
Dependencies are inferred from the claim text.