Field effect transistor logic circuit with reduced power consumption
AssigneeNEC Corporation
InventorKeiichi Numata
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AssigneeNEC Corporation
InventorKeiichi Numata
Estimating the term…
There is disclosed a field effect transistor logic circuit having an output terminal to be connected to a gate of an input field effect transistor in a next stage field effect transistor logic circuit. The field effect transistor logic circuit includes a depletion transistor having a drain connected to a first power supply voltage, an enhancement transistor having a drain connected at a node in common to a gate and a source of the depletion transistor. A gate of the enhancement transistor is connected to an input terminal, and a source of the enhancement transistor is connected to a second power supply voltage which is lower than the first power supply voltage. A high level potential limiting circuit is connected between the node and the output terminal, to lower a potential of the output terminal to a level which turns on a drain-source channel of the input field effect transistor of the next stage field effect transistor logic circuit but which never turns on a gate-source of the input field effect transistor of the next stage field effect transistor logic circuit, when the potential of the node is at a high level. A lower level lowering circuit having an input connected to the input terminal, is also connected between the output terminal and the second power supply voltage, for pulling down the potential of the output terminal to the potential of the second power supply voltage when the potential on the node is at a low level.
A field effect transistor logic circuit having an output terminal to be connected to a gate of an input field transistor in a next stage field effect transistor logic circuit, the field effect transistor logic circuit including a depletion transistor having a drain connected to a first power supply voltage, an enhancement transistor having a drain connected at a node to a source of the depletion transistor, a gate of said enhancement transistor being connected to an input terminal, a source of said enhancement transistor being connected to a second power supply voltage which is lower than the first power supply voltage, and a high level potential limiting circuit connected between said node and said output terminal, for lowering a potential of said output terminal to a level which turns on a drain-source channel of said input field effect transistor of said next stage field effect transistor logic circuit but which never turns on a gate-source of said input field effect transistor of said next stage field effect transistor logic circuit, when the potential on said node is at a high level and a lower level lowering circuit connected between said output terminal and said second power supply voltage, and having an input connected to said input terminal, for pulling down the potential of said output terminal to the potential of the second power supply voltage when the potential on said node is at a low level.
Dependencies are inferred from the claim text.