Radio frequency supply circuit for in situ cleaning of plasma-enhanced chemical vapor deposition chamber using NF3 or NF3/He mixture

A plasma-enhanced chemical vapor deposition system comprising:

• a supporting member for supporting a substrate;
• a radio frequency generator;
• a coil for producing an inductively coupled plasma, the coil being connected through a circuit path to the radio frequency generator;
• and
• a balancing capacitor in the circuit path, the capacitance of the balancing capacitor being such that a resonant frequency of the circuit path is less than a frequency of a signal output by the radio frequency generator so that fluctuations in the power input to the plasma are self-correcting.

A plasma-enhanced chemical vapor deposition system comprising:

• a supporting member for supporting a substrate;
• a radio frequency generator;
• a showerhead electrode positioned over the supporting member connected through a circuit path to the radio frequency generator and providing a reactant gas;
• a low-frequency generator electrically connected to the supporting member,
• the radio frequency generator and the low-frequency generator creating a plasma from the reactant gas when activated;
• and
• a balancing inductor in the circuit path, the inductance of the balancing inductor selected such that fluctuations in the power input to the plasma are self-correcting.