Electro-optical device having silicon nitride interlayer insulating film
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Yasuhiko Takemura
Life of this patent
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Abstract
Using thin film transistors (TFTs), an active matrix circuit, a driver circuit for driving the active matrix circuit or the like are formed on one substrate. Circuits such as a central processing unit (CPU) and a memory, necessary to drive an electric device, are formed using single crystalline semiconductor integrated circuit chips. After the semiconductor integrated circuit chips are adhered to the substrate, the chips are connected with wirings formed on the substrate by a chip on glass (COG) method, a wire bonding method or the like, to manufacture the electric device having a liquid crystal display (LCD) on one substrate.
Claims77
A semiconductor device including at least one thin film transistor formed over a substrate, said thin film transistor comprising:
- a first gate electrode;
- a first gate insulating film formed on said first gate electrode;
- a semiconductor layer formed over said first gate electrode with said first gate insulating film interposed therebetween, said semiconductor layer including at least a pair of impurity doped regions and a channel region interposed therebetween;
- a second gate insulating film formed on said semiconductor layer;
- a second gate electrode formed over said channel region with said second gate insulating film interposed therebetween;
- an interlayer insulating film comprising silicon nitride covering said thin film transistor.
A semiconductor device having an active matrix circuit comprising first thin film transistors over a substrate and a peripheral circuit comprising second thin film transistors over said substrate for driving said active matrix circuit, each of said first and second thin film transistors comprising:
- a first gate electrode;
- a first gate insulating film formed on said first gate electrode;
- a semiconductor layer formed over said first gate electrode with said first gate insulating film interposed therebetween, said semiconductor layer including at least a pair of impurity doped regions and a channel region interposed therebetween;
- a second gate insulating film formed on said semiconductor layer;
- a second gate electrode formed over said channel region with said second gate insulating film interposed therebetween;
- and
- an interlayer insulating film comprising silicon nitride covering said first and second thin film transistors.
A semiconductor device including at least one thin film transistor formed over a substrate, said thin film transistor comprising:
- a first gate electrode;
- a first gate insulating film formed on said first gate electrode;
- a semiconductor layer formed over said first gate electrode with said first gate insulating film interposed therebetween, said semiconductor layer including at least a pair of impurity doped regions and a channel region interposed therebetween;
- a second gate insulating film formed on said semiconductor layer;
- a second gate electrode formed over said channel region with said second gate insulating film interposed therebetween;
- an interlayer insulating film comprising silicon nitride covering said thin film transistor,
- wherein the pair of impurity regions are partly overlapped with the first gate electrode.
A semiconductor device including at least one thin film transistor formed over a substrate, said thin film transistor comprising:
- a first gate electrode;
- a first gate insulating film formed on said first gate electrode;
- a semiconductor layer formed over said first gate electrode with said first gate insulating film interposed therebetween, said semiconductor layer including at least a pair of impurity doped regions and a channel region interposed therebetween;
- a second gate insulating film formed on said semiconductor layer;
- a second gate electrode formed over said channel region with said second gate insulating film interposed therebetween;
- an interlayer insulating film comprising silicon nitride covering said thin film transistor,
- wherein said first gate electrode extends beyond side edges of said second gate electrode in a channel length direction.
A semiconductor device including at least one thin film transistor formed over a substrate, said thin film transistor comprising:
- a first gate electrode;
- a first gate insulating film formed on said first gate electrode;
- a semiconductor layer formed over said first gate electrode with said first gate insulating film interposed therebetween, said semiconductor layer including at least a pair of first impurity doped regions, a channel region interposed between the first impurity doped regions, and a pair of second impurity doped regions adjacent to the pair of first impurity doped regions;
- a second gate insulating film formed on said semiconductor layer;
- a second gate electrode formed over said channel region with said second gate insulating film interposed therebetween;
- an interlayer insulating film comprising silicon nitride covering said thin film transistor,
- wherein the pair of first impurity regions are partly overlapped with the first gate electrode.
A semiconductor device having an active matrix circuit comprising first thin film transistors over a substrate and a peripheral circuit comprising second thin film transistors over said substrate for driving said active matrix circuit, each of said first and second thin film transistors comprising:
- a first gate electrode;
- a first gate insulating film formed on said first gate electrode;
- a semiconductor layer formed over said first gate electrode with said first gate insulating film interposed therebetween, said semiconductor layer including at least a pair of impurity doped regions and a channel region interposed therebetween;
- a second gate insulating film formed on said semiconductor layer;
- a second gate electrode formed over said channel region with said second gate insulating film interposed therebetween;
- and
- an interlayer insulating film comprising silicon nitride covering said first and second thin film transistors,
- wherein said pair of impurity doped regions are partly overlapped with said first gate electrode in each of said first and second thin film transistors.
A semiconductor device having an active matrix circuit comprising first thin film transistors over a substrate and a peripheral circuit comprising second thin film transistors over said substrate for driving said active matrix circuit, each of said first and second thin film transistors comprising:
- a first gate electrode;
- a first gate insulating film formed on said first gate electrode;
- a semiconductor layer formed over said first gate electrode with said first gate insulating film interposed therebetween, said semiconductor layer including at least a pair of impurity doped regions and a channel region interposed therebetween;
- a second gate insulating film formed on said semiconductor layer;
- a second gate electrode formed over said channel region with said second gate insulating film interposed therebetween;
- and
- an interlayer insulating film comprising silicon nitride covering said first and second thin film transistors,
- wherein said first gate electrode extends beyond side edges of said second gate electrode in a channel length direction in each of said first and second thin film transistors.
A semiconductor device having an active matrix circuit comprising first thin film transistors over a substrate and a peripheral circuit comprising second thin film transistors over said substrate for driving said active matrix circuit, each of said first and second thin film transistors comprising:
- a first gate electrode;
- a first gate insulating film formed on said first gate electrode;
- a semiconductor layer formed over said first gate electrode with said first gate insulating film interposed therebetween, said semiconductor layer including at least a pair of first impurity doped regions, a channel region interposed between the first impurity doped regions, and a pair of second impurity doped regions adjacent to the pair of first impurity doped regions;
- a second gate insulating film formed on said semiconductor layer;
- a second gate electrode formed over said channel region with said second gate insulating film interposed therebetween;
- an interlayer insulating film comprising silicon nitride covering said thin film transistor,
- wherein the pair of first impurity regions are partly overlapped with the first gate electrode in each of the first and second thin film transistors.
A semiconductor device having an active matrix circuit comprising first thin film transistors over a substrate and a peripheral circuit comprising second thin film transistors over said substrate for driving said active matrix circuit, each of said first and second thin film transistors comprising:
- a semiconductor layer including at least a pair of impurity doped regions and a channel region interposed therebetween;
- a gate insulating film adjacent to said semiconductor layer;
- a gate electrode adjacent to said channel region with said gate insulating film interposed therebetween;
- and
- an interlayer insulating film comprising silicon nitride covering said first and second thin film transistors,
- wherein the channel region of said first thin film transistors is amorphous while the channel region of said second thin film transistors is crystalline.
A semiconductor device having an active matrix circuit comprising first thin film transistors over a substrate and a peripheral circuit comprising second thin film transistors over said substrate for driving said active matrix circuit, each of said first and second thin film transistors comprising:
- a first gate electrode;
- a first gate insulating film formed on said first gate electrode;
- a semiconductor layer formed over said first gate electrode with said first gate insulating film interposed therebetween, said semiconductor layer including at least a pair of impurity doped regions and a channel region interposed therebetween;
- a second gate insulating film formed on said semiconductor layer;
- a second gate electrode formed over said channel region with said second gate insulating film interposed therebetween;
- and
- an interlayer insulating film comprising silicon nitride covering said first and second thin film transistors,
- wherein the channel region of said first thin film transistors is amorphous while the channel region of said second thin film transistors is crystalline.
A semiconductor device having an active matrix circuit comprising first thin transistors over a substrate and a peripheral circuit comprising second thin film transistors over said substrate for driving said active matrix circuit, each of said first and second thin film transistors comprising:
- a first gate electrode;
- a first gate insulating film formed on said first gate electrode;
- a semiconductor layer formed over said first gate electrode with said first gate insulating film interposed therebetween, said semiconductor layer including at least a pair of impurity doped regions and a channel region interposed therebetween;
- a second gate insulating film formed on said semiconductor layer;
- a second gate electrode formed over said channel region with said second gate insulating film interposed therebetween;
- and
- an interlayer insulating film comprising silicon nitride covering said first and second thin film transistors,
- wherein said pair of impurity doped regions are partly overlapped with said first gate electrode in each of said first and second thin film transistors.
A semiconductor device having an active matrix circuit comprising first thin film transistors and a peripheral circuit comprising second thin film transistors for driving said active matrix circuit, each of said first and second thin film transistors comprising:
- a first gate electrode;
- a first gate insulating film formed on said first gate electrode;
- a semiconductor layer formed over said first gate electrode with said first gate insulating film interposed therebetween, said semiconductor layer including at least a pair of impurity doped regions and a channel region interposed therebetween;
- a second gate insulating film formed on said semiconductor layer;
- a second gate electrode formed over said channel region with said second gate insulating film interposed therebetween;
- and
- an interlayer insulating film comprising silicon nitride covering said first and second thin film transistors,
- wherein said first gate electrode extends beyond side edges of said second gate electrode in a channel length direction in each of said first and second thin film transistors.
A semiconductor device having an active matrix circuit comprising first thin film transistors over a substrate and a peripheral circuit comprising second thin film transistors over said substrate for driving said active matrix circuit, each of said first and second thin film transistors comprising:
- a first gate electrode;
- a first gate insulating film formed on said first gate electrode;
- a semiconductor layer formed over said first gate electrode with said first gate insulating film interposed therebetween, said semiconductor layer including at least a pair of first impurity doped regions, a channel region interposed between the first impurity doped regions, and a pair of second impurity doped regions adjacent to the pair of first impurity doped regions;
- a second gate insulating film formed on said semiconductor layer;
- a second gate electrode formed over said channel region with said second gate insulating film interposed therebetween;
- an interlayer insulating film comprising silicon nitride covering said thin film transistor,
- wherein the pair of first impurity regions are partly overlapped with the first gate electrode in each of the first and second thin film transistors.
A semiconductor device including at least one thin film transistor formed over a substrate, said thin film transistor comprising:
- a gate electrode;
- a gate insulating film formed on said gate electrode;
- and
- a semiconductor layer formed over said gate electrode with said gate insulating film interposed therebetween, said semiconductor layer including at least a pair of first impurity doped regions and a channel region interposed between the first impurity doped regions, and a pair of second impurity doped regions adjacent to the pair of first impurity doped regions,
- wherein the pair of first impurity regions are partly overlapped with the gate electrode.
A semiconductor device having an active matrix circuit comprising first thin film transistors over a substrate and a peripheral circuit comprising second thin film transistors over said substrate for driving said active matrix circuit, each of said first and second thin film transistors comprising:
- a gate electrode;
- a gate insulating film formed on said gate electrode;
- and
- a semiconductor layer formed over said gate electrode with said gate insulating film interposed therebetween, said semiconductor layer including at least a pair of first impurity doped regions and a channel region interposed between the first impurity doped regions, and a pair of second impurity doped regions adjacent to the pair of first impurity doped regions,
- wherein the pair of first impurity regions are partly overlapped with the gate electrode in each of the first and second thin film transistors.
Dependencies are inferred from the claim text.