US 6,197,683 B1 · Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same

Abstract

A method of forming a metal nitride film using chemical vapor deposition (CVD), and a method of forming a metal contact of a semiconductor device using the same, are provided. The method of forming a metal nitride film using chemical vapor deposition (CVD) in which a metal source and a nitrogen source are used as a precursor, includes the steps of inserting a semiconductor substrate into a deposition chamber, flowing the metal source into the deposition chamber, removing the metal source remaining in the deposition chamber by cutting off the inflow of the metal source and flowing a purge gas into the deposition chamber, cutting off the purge gas and flowing the nitrogen source into the deposition chamber to react with the metal source adsorbed on the semiconductor substrate, and removing the nitrogen source remaining in the deposition chamber by cutting off the inflow of the nitrogen source and flowing the purge gas into the deposition chamber. Accordingly, the metal nitride film has low resistivity and a low content of Cl even with excellent step coverage, and it can be formed at a temperature of 500° C. or lower. Also, a deposition speed, approximately 20 Å/cycle, is suitable for mass production.

Claims17

Dependent claims

A method of forming a metal nitride film using chemical vapor deposition (CVD) in which a metal source and a nitrogen source are used as precursors, comprising the steps of:

(a) inserting a semiconductor substrate into a deposition chamber;
(b) admitting the metal source into the deposition chamber;
(c) chemisorbing a first portion of the metal source onto the substrate, and physisorbing a second portion of the metal source onto the substrate;
purging the metal source from the deposition chamber;
admitting the nitrogen source into the deposition chamber;
chemisorbing a portion of the nitrogen source onto the substrate, and physisorbing a second portion of the nitrogen source onto the substrate;
reacting the chemisorbed and physisorbed metal source with the chemisorbed and physisorbed nitrogen source to form a metal nitride film on the substrate;
and,
purging the nitrogen source from the deposition chamber.

6 more elements

A method of forming a metal contact of a semiconductor device, comprising the steps of:

(a) forming a first metal layer on a semiconductor substrate;
(b) depositing an interlayer insulative film on the first metal layer;
(c) forming a contact hole by etching the interlayer insulative film until the first metal layer is exposed;
(d) introducing a metal source into a deposition chamber and chemisorbing a first portion thereof to the resultant structure of the step (c) and physisorbing a second portion to the resultant structure of step (c);
(e) purging the unadsorbed metal source from the deposition chamber;
(f) introducing a nitrogen source into the deposition chamber, and reacting at least a potion thereof with the portions of the metal source chemisorbed and physisorbed on the structure of the step (c), to form a metal nitride film, being a barrier metal layer, on the exposed first metal layer and the contact hole;
(g) purging the unreacted nitrogen source from the deposition chamber;
(h) forming a metal plug on the resultant structure of step (g);
(I) exposing the interlayer insulative film by blanket etching the metal plug;
and
(j) forming a second metal layer on the resultant structure of step (I).

8 more elements

Dependencies are inferred from the claim text.

Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same

Life of this patent

Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same

Life of this patent

Abstract

Claims17