Surface acoustic wave device comprising langasite single crystal substrate
AssigneesNGK Insulators, Ltd., Masao Takeuchi
InventorsMasao Takeuchi, Mitsuhiro Tanaka
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AssigneesNGK Insulators, Ltd., Masao Takeuchi
InventorsMasao Takeuchi, Mitsuhiro Tanaka
Estimating the term…
A surface acoustic wave device including a substrate and an electrode structure formed on the substrate, said substrate being made of a doubly rotated Y-cut (αX-θY cut) Langasite (La3Ga5SiO14), a rotation angle α from the X axis being substantially 50°±5° and a rotation angle θ from the Y axis being substantially 19°-30°. The device further includes a normal type electrode structure which reveals a natural single-phase unidirectional transducer property together with an anisotropy of the substrate. The device further has a double electrode type electrode structure which cancels the directionality, or a floating type electrode structure which reverses the directionality. The electrode structure is formed to constitute a surface acoustic wave filter having a low insertion loss and an excellent phase property.
A surface acoustic wave device, comprising:
A surface acoustic wave device comprising:
Dependencies are inferred from the claim text.