Post chemical-mechanical planarization (CMP) cleaning composition
AssigneeESC, Inc.
InventorsShahriar Naghshineh, Jeff Barnes, Yassaman Hashemi, Ewa B. Oldak
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Abstract
A cleaning solution is provided for cleaning copper-containing microelectronic substrates, particularly for post-CMP or Via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethanolamine, gallic acid, and water. The pH of the cleaning solution is greater than 10.
Claims9
A post-CMP cleaning solution for cleaning microelectronic substrates, the cleaning solution comprising:
- 0.15 to 1.75% by weight of a quaternary ammonium hydroxide selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, trimethylethylammonium hydroxide, and combinations thereof;
- 0.4 to 2.75% by weight of an organic amine selected from the group consisting of monoethanolamine, aminoethylethanolamine,-methylaminoethanol, aminoethoxyethanol, diethanolamine, triethanolamine, C1-C5 alkanolamines, and combinations thereof;
- 0.09 to 1.0% by weight of a corrosion inhibitor selected from the group consisting of gallic acid, catechol, pyrogallol, resorcinol, hydroquinone, benzotriazole, and combinations thereof;
- balance deionized water;
- wherein the pH of the solution is greater than 10.
A post-CMP cleaning solution for cleaning microelectronic substrates, the cleaning solution comprising:
- a. 0.15 to 1.25% by weight tetramethylammonium hydroxide;
- b. 0.4 to 2.25% by weight monoethanolamine;
- c. 0.09 to 0.9% by weight gallic acid;
- d. balance deionized water,
- wherein the pH of the solution is greater than 10.
A post-CMP cleaning solution for cleaning microelectronic substrates, comprising:
- 1.5 to 12.5 wt % of a concentrate consisting essentially of
- tetramethylammonium hydroxide, in an amount in the range from about 8.0 wt % to about 12.4 wt %;
- monoethanolamine, in an amount in the range from about 14.4 wt % to about 27.8 wt %;
- gallic acid, in an amount in the range from about 5.6 wt % to about 10.9 wt %;
- balance deionized water and;
- 87.5 to 98.5 wt % deionized water.
A method for preparing a post-CMP cleaning solution containing 0.15 to 1.25 wt % tetramethylammonium hydroxide, 0.4 to 2.25% by weight monoethanolamine, 0.09 to 0.9% by weight gallic acid balance deionized water comprising the steps of:
- a) preparing a mixture of one-half of the total final concentration of water and said monoethanolamine;
- b) adding said gallic acid to said water and methanolamine mixture;
- c) adding the balance of the water to said gallic acid-water-methanolamine mixture and mixing with said gallic acid is described;
- d) adding said tetramethylammonium hydroxide to said water-gallic acid-methanolamine mixture and mixing with low shear conditions to achieve a final mixture;
- and
- e) filtering said final mixture through a 0.1 micron filter.
Dependencies are inferred from the claim text.