Method of planarizing the upper surface of a semiconductor wafer

A method of modifying a surface of a wafer suited for fabrication of a semiconductor device comprising the steps of:

• a) providing a wafer comprising at least one dielectric material having a surface etched to form a pattern and at least a conductive material deployed over the surface of the at least one dielectric material;
• b) contacting the conductive material of the wafer to a plurality of three-dimensional abrasive composites fixed to an abrasive article, the plurality of abrasive composites comprising a plurality of abrasive particles, fixed and dispersed in a binder;
• and
• c) relatively moving the wafer while the conductive material is in contact with the plurality of abrasive composites until the exposed surface of the wafer is planar and comprises at least one area of exposed conductive material and at least one area of exposed dielectric material.

A method of modifying a surface of a wafer suited for fabrication of a semiconductor device comprising the steps of:

• a) providing a wafer comprising at least one dielectric material having a surface etched to form a pattern, the dielectric material covered with at least one intermediate layer, and the intermediate layer covered by a conductive material;
• b) contacting the conductive material of the wafer to a plurality of three-dimensional abrasive composites fixed to an abrasive article, the plurality of abrasive composites comprising a plurality of abrasive particles fixed and dispersed in a binder;
• and
• c) relatively moving the wafer while the conductive material is in contact with the plurality of abrasive composites until the exposed surface of the wafer comprises at least one area of exposed conductive material and at least one area of exposed dielectric material.

A method of modifying an exposed major surface of a wafer suited for fabrication of a semiconductor device, comprising the steps of:

• a) providing a wafer comprising at least a first and a second materials, the first and the second materials each having a surface, at least one of the materials having a surface etched to form a pattern with an outer material deployed over the at least first and second materials;
• b) contacting the outer material of the wafer to a plurality of three-dimensional abrasive composites fixed to an abrasive article, the plurality of abrasive composites comprising a plurality of abrasive particles fixed and dispersed in a binder;
• and
• c) relatively moving the wafer with respect to the abrasive article while the outer material is in contact with the plurality of abrasive composites until an exposed surface of the wafer is planar and comprises one area of exposed outer material and at least one area of exposed first material and one area of exposed second material.

A method of modifying a surface of a wafer suited for fabrication of a semiconductor device comprising the steps of:

• a) providing a wafer comprising at least one dielectric material having a surface etched to form a pattern, the dielectric material covered with at least one intermediate layer, and the intermediate layer covered by a conductive material;
• b) contacting the conductive material of the wafer to a plurality of three-dimensional abrasive composites fixed to an abrasive article, the plurality of abrasive composites comprising a plurality of abrasive particles fixed and dispersed in a binder;
• and
• c) relatively moving the wafer while the conductive material is in contact with the plurality of abrasive composites until the exposed surface of the wafer comprises at least one area of exposed conductive material and at least one area of exposed intermediate layer.

A method of modifying a surface of a wafer suited for fabrication of a semiconductor device comprising the steps of:

• a) providing a wafer comprising at least a first material having a surface etched to form a pattern, the first material covered with at least one intermediate material, and the intermediate material covered by at least one second material;
• b) contacting the second material of the wafer to a plurality of three-dimensional abrasive composites fixed to an abrasive article, the plurality of abrasive composites comprising a plurality of abrasive particles fixed and dispersed in a binder;
• and
• c) relatively moving the wafer while the second material is in contact with the plurality of abrasive composites until the exposed surface of the wafer comprises at least one area of exposed second material and at least one area of exposed intermediate material.