Method of preparing a partial one-shot electron beam exposure mask and method of direct-writing patterns by use of a partial one-shot electron beam exposure mask

A method of forming at least one aperture mask pattern on a partial one-shot charge-particle beam exposure mask, said method comprising the steps of:

• extracting data of at least one aperture mask pattern from design data which include write-required patterns and repeating units, so that boundary lines of said at least one aperture mask pattern are different from boundary lines of said repeating unit on said design data and so that said at least one aperture mask pattern completely includes at least one of said write-required patterns without partially or incompletely including said write-required pattern, said at least one aperture mask pattern being shifted in position from said repeating unit to compensate the difference in boundary lines between said at least one aperture mask and said repeating unit;
• and
• writing said at least one aperture mask pattern on said partial one-shot charge-particle beam exposure mask in accordance with said data extracted.

A data-extracting system for a partial one-shot charge particle beam exposure, wherein said data-extracting system is capable of extracting data of at least one aperture mask pattern from design data which include write-required patterns and repeating units, so that boundary lines of said at least one aperture mask pattern are different from boundary lines of said repeating unit on said design data and so that said at least one aperture mask pattern completely includes at least one of said write-required patterns without partially or incompletely including said write-required pattern, said at least one aperture mask pattern being shifted in position from said repeating unit to compensate the difference in boundary lines between said at least one aperture mask and said repeating unit, and said system extracts the data of said at least one aperture mask.

A storage medium which stores a computer-program for a data-extracting process for a partial one-shot charge particle beam exposure, wherein said data-extracting process comprises a step of extracting data of at least one aperture mask pattern from design data which include write-required patterns and repeating units, so that boundary lines of said at least one aperture mask pattern are different from boundary lines of said repeating unit on said design data and so that said at least one aperture mask pattern completely includes at least one of said write-required patterns without partially or incompletely including said write-required pattern, said at least one aperture mask pattern being shifted in position from said repeating unit to compensate the difference in boundary lines between said at least one aperture mask and said repeating unit.

A storage medium which stores a computer-program for defining a partial one-shot unit based upon which a partial one-shot charge particle beam exposure is conducted,

• wherein said computer-program includes a process of extracting data of at least one aperture mask pattern from design data which include write-required patterns and repeating units, so that boundary lines of said at least one aperture mask pattern are different from boundary lines of said repeating unit on said design data and so that said at least one aperture mask pattern completely includes at least one of said write-required patterns without partially or incompletely including said write-required pattern, said at least one aperture mask pattern being shifted in position from said repeating unit to compensate the difference in boundary lines between said at least one aperture mask and said repeating unit.

A method of extracting data from mask design data, the extracted data being used to form a partial one shot exposure mask, the method comprising the steps of:

• providing mask design data that includes a repeating unit pattern that includes an incomplete circuit element pattern, the repeating unit pattern being arranged so that the incomplete circuit element pattern would be completed if plural of the repeating unit pattern were to adjoin one another;
• and
• extracting data from the mask design data to define an aperture mask pattern for the partial one shot exposure mask by shifting a position of the aperture mask pattern relative to the repeating unit pattern, wherein boundary lines of the aperture mask pattern are arranged so that all of the circuit element patterns in the aperture mask pattern are complete.