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US 6,191,994 B1Granted
Semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorTsukasa Ooishi
Life of this patent
Estimating the term…
Abstract
Improvement in an operating speed of a semiconductor device reduces power consumption. A current flowing through internal circuits 2A and 2B is supplied, via nodes N5 and N6, by transistors 13 through 20 forming two current mirror circuits as required. A voltage supplied to the internal circuits 2A and 2B is supplied from a transistor 10 via the nodes N5 and N6.
Claims19
A semiconductor device comprising:
- an internal circuit formed in a semiconductor chip connected to first and second power supplies, and inserted in a current path formed between first and second nodes to receive an internal supply voltage via said first node;
- a first insulated-gate transistor having a control electrode, a first current electrode connected to said first power supply, and a second current electrode connected to said first node;
- a second insulated-gate transistor having a first current electrode connected to said first current electrode of said first insulated-gate transistor, a control electrode and a second current electrode both connected to said control electrode of said first insulated-gate transistor;
- a third insulated-gate transistor having a first current electrode connected to said second power supply, a second current electrode and a control electrode both connected to said second node;
- a fourth insulated-gate transistor having a control electrode connected to said control electrode of said third insulated-gate transistor, a first current electrode connected to said second power supply, and a second current electrode connected to said second current electrode of said second insulated-gate transistor;
- and
- a voltage supply circuit for supplying the internal supply voltage to said first node.
4 more elements
A semiconductor device comprising:
- an internal circuit formed in a semiconductor chip connected to first and second power supplies;
- a first insulated-gate transistor having a control electrode, a second current electrode connected to a node for supplying an internal supply voltage to said internal circuit, and a first current electrode connected to said first power supply;
- a second insulated-gate transistor having a control electrode connected to said control electrode of said first insulated-gate transistor, a first current electrode connected to said first current electrode of said first insulated-gate transistor, and a second current electrode connected to said control electrode of said first insulated-gate transistor;
- a third insulated-gate transistor having a control electrode, a first current electrode connected to said second power supply, and a second current electrode connected to said second current electrode of said second insulated-gate transistor;
- and
- a differential amplifier having an output terminal connected to said control electrode of said third insulated-gate transistor, a first input terminal connected to said node, and a second input terminal to which a reference voltage is applied,
- wherein a current flowing through said first insulated-gate transistor is greater than that flowing through said second insulated-gate transistor.
4 more elements
A semiconductor device comprising:
- an internal circuit formed in a semiconductor chip connected to first and second power supplies, said internal circuit receiving a first voltage;
- a boost circuit capable of generating a second voltage, higher than said first voltage, at a first node connected to said internal circuit;
- a differential amplifier having a first terminal to which a voltage, obtained by subtracting a predetermined voltage from a voltage at said first node, is applied, a second terminal to which a reference voltage is applied, and an output terminal for amplifying a potential difference between said first and second terminals;
- a current control means connected to said output terminal of said differential amplifier as well as connected between said first power supply and said first node, said current control circuit controlling a current flowing from said first power supply to said first node in accordance with a voltage at said output terminal of said differential amplifier;
- and
- control means for turning off said boost circuit when a voltage supplied from said first power supply is higher than a voltage higher than the reference voltage by the predetermined voltage.
3 more elements
A semiconductor device comprising:
- a voltage-down converter receiving a power supply voltage for supplying a boost node with a converted voltage as a boost voltage when the power supply voltage is higher than a target level of the boost voltage;
- and
- a boost circuit for supplying a boost node with the boost voltage when the power supply voltage is lower than a target level of the boost voltage.
A semiconductor device comprising:
- a plurality of boost circuits each for supplying a boost node, with a boost voltage;
- and
- a control circuit for selectively activating said boost circuits in response to a level of a power supply voltage.
Dependencies are inferred from the claim text.