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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Mitsunori Tsuchiya, Kazuo Urata, Itaru Koyama, Shinji Imatou, Shigenori Hayashi, Naoki Hirose, Mari Sasaki, Noriya Ishida, Kouhei Wada
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An electronic device comprising a substrate having a frame, a metal lead and an electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film or wherein pores at the surface of the organic resin are filled within an inactive gas such as argon because of a plasma treatment of the resin surface with the inactive gas whereby impurities are prevented from entering into the organic resin through the pores.
An electronic device comprising a semiconductor chip and a package made of a resin enclosing said semiconductor chip, wherein an outermost surface of said package is densified by treating said surface with a plasma of an inactive gas, said outermost surface being in contact with outside air.
An electronic device comprising a semiconductor chip and a package made of a resin enclosing said semiconductor chip wherein said device is characterized in that pores of said package at its surface or a vicinity thereof are filled with an inactive material selected from the group of argon, neon, helium, krypton, nitrogen fluorides, carbon fluorides and nitrogen to form a densified region extending to a depth sufficient to prevent moisture permeation, said densified region being formed by treating said surface with a plasma gas of the inactive material wherein said densified region is in contact with outside air.
An electronic device comprising a semiconductor chip and a package made of a resin enclosing said semiconductor chip, wherein an outermost surface of said package is densified by treating said surface with a plasma of an inactive gas, said outermost surface having the same composition as said resin.
An electronic device comprising a semiconductor chip and a package made of a resin enclosing said semiconductor chip wherein said device is characterized in that pores of said package at its surface or a vicinity thereof are filled with an inactive material selected from the group of argon, neon, helium, krypton, nitrogen fluorides, carbon fluorides and nitrogen to form a densified region extending to a depth sufficient to prevent moisture permeation, said densified region being formed by treating said surface with a plasma gas of the inactive material wherein said densified region and said resin have the same composition.
An electronic device comprising a semiconductor chip and a package made of a resin enclosing said semiconductor chip, wherein an outermost surface of said package is densified by treating said surface with a plasma of an inactive gas, rather than by deposition.
An electronic device comprising a semiconductor chip and a package made of a resin enclosing said semiconductor chip wherein said device is characterized in that pores of said package at its surface or a vicinity thereof are filled with an inactive material selected from the group of argon, neon, helium, krypton, nitrogen fluorides, carbon fluorides and nitrogen to form a densified region extending to a depth sufficient to prevent moisture permeation, said densified region being formed by treating said surface with a plasma gas of the inactive material, rather than by deposition.
An electronic device comprising a package made of a resin, wherein an outermost surface of said package is densified by treating sad surface with a plasma of an inactive gas, said outermost surface being in contact with outside air.
An electronic device comprising a package made of a resin wherein said device is characterized in that pores of said package at its surface or a vicinity thereof are filled with an inactive material selected from the group of argon, neon, helium, krypton, nitrogen fluoride, carbon fluoride and nitrogen to form a densified region extending to a depth sufficient to prevent moisture permeation, said densified region being formed by treating said surface with a plasma gas of the inactive material wherein said densified region is in contact with outside air.
An electronic device comprising a package made of a resin, wherein an outermost surface of said package is densified by treating said surface with a plasma of an inactive gas, said outermost surface having the same composition as said resin.
An electronic device comprising a package made of a resin wherein said device is characterized in that pores of said package at its surface or vicinity thereof are filled with an inactive material selected from the group consisting of argon, neon, helium, krypton, nitrogen fluoride, carbon fluoride and nitrogen to form a densified region extending to a depth sufficient to prevent moisture permeation, said densified region being formed by treating said surface with a plasma gas of the inactive material wherein said densified region and said resin have the same composition.
An electronic device comprising a package made of a resin, wherein an outermost surface of said package is densified by treating said surface with a plasma of an inactive gas, rather than by deposition.
An electronic device comprising a package made of a resin wherein said device is characterized in that pores of said package at its surface or a vicinity thereof are filled with an inactive material selected from the group consisting of argon, neon, helium, krypton, nitrogen fluoride, carbon fluoride and nitrogen to form a densified region extending to a depth sufficient to prevent moisture permeation, said densified region being formed by treating said surface with a plasma gas of the inactive material, rather than by deposition.
Dependencies are inferred from the claim text.