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US 6,191,485 B1Granted
Semiconductor device
AssigneeFuji Electronic Co., Ltd.
InventorsTomoyuki Kawashima, Kenji Okamoto, Tadayoshi Ishii, Mitsuaki Kirisawa, Kazuhiko Imamura
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Abstract
In a semiconductor device having a laminated metal layer in which a metal layer whose main component is aluminum and a metal layer whose main component is nickel are laminated on each other, the ratio (tAl/tNi) of the thickness (tAl) of the metal layer whose main component is aluminum to that (tNi) of the metal layer whose main component is nickel is controlled to 5 or larger, so that part of the metal layer whose main component is aluminum remains even if an Al—Ni intermetallic compound is formed.
Claims2
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a laminated metal layer formed in said semiconductor substrate, said laminated metal layer comprising a first metal layer containing aluminum as a major component and a second metal layer containing nickel as a major component, which are laminated in contact with each other,
- wherein the ratio (tAl/tNi) of the thickness (tAl) of the first metal layer containing aluminum as a major component to the thickness (tNi) of the second metal layer containing nickel as a major component is at least 5.
1 more element
Dependencies are inferred from the claim text.