Semiconductor device

A semiconductor device comprising:

• a semiconductor layer;
• an integrated circuit formed on the semiconductor layer and having separately formed driving circuit and pixel regions;
• and a plurality of metal-insulator-semiconductor field-effect transistors formed in the driving circuit and the pixel regions, each metal-insulator-semiconductor field-effect transistor comprising a gate electrode and a gate insulator formed on the semiconductor layer, a source region and a drain region both formed in the semiconductor layer, and a channel forming region disposed between the source and the drain regions;
• wherein a gate length of a metal-insulator-semiconductor field-effect transistor formed in the pixel region is larger than the minimum gate length among the gate lengths of a plurality of metal-insulator-semiconductor field-effect transistors formed in the driving circuit region to restrain the heat produced due to operation of the metal-insulator-semiconductor field-effect transistor in the pixel region.

A semiconductor device comprising:

• a semiconductor layer;
• an integrated circuit formed on the semiconductor layer and having separately formed driving circuit and pixel regions;
• and a plurality of metal-insulator-semiconductor field-effect transistors formed in the driving circuit and the pixel regions, each metal-insulator-semiconductor field-effect transistor comprising a gate electrode and a gate insulator formed on the semiconductor layer, a source region and a drain region both formed in the semiconductor layer, and a channel forming region disposed between the source and the drain regions;
• wherein an impurity concentration of the source region and the drain region of the metal-insulator-semiconductor field-effect transistor formed in the pixel region is lower proximate the channel forming region thereof than in a portion spaced from the channel forming region to restrain the heat produced due to operation of the metal-insulator-semiconductor field-effect transistor in the pixel region.

A semiconductor device comprising:

• a semiconductor layer;
• an integrated circuit formed on the semiconductor layer and having separately formed driving circuit and pixel regions;
• and a plurality of metal-insulator-semiconductor field-effect transistors formed in the driving circuit and the pixel regions, each metal-insulator-semiconductor field-effect transistor comprising a gate electrode and a gate insulator formed on the semiconductor layer, a source region and a drain region both formed in the semiconductor layer, and a channel forming region disposed between the source and the drain regions;
• wherein a gate width of a metal-insulator-semiconductor field-effect transistor formed the pixel region is equal to or smaller than a predetermined minimum gate width among all of the metal-insulator-semiconductor field-effect transistors formed in the driving circuit region to restrain the heat produced due to operation of the metal-insulator-semiconductor field-effect transistor in the pixel region.