Semiconductor device and method for fabricating the same
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsYoung June Park, Jong Ho Lee, Hyeok Jae Lee
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Abstract
A semiconductor device and method of fabricating the same. The semiconductor device includes a first insulating film formed on a substrate and having a plurality of holes therein; a cavity formed under the first insulating film; an impurity region formed in the substrate and around the cavity; a second insulating film formed on portions of the first insulating film to fill the holes and a space between the cavity and the impurity region; a plurality of contact holes formed to expose certain portions of the impurity region; and a plurality of wiring layers formed to be in contact with the impurity region through the contact holes.
Claims8
A semiconductor device comprising:
- a first insulating film formed on a substrate and having a plurality of holes therein;
- a cavity formed under the first insulating film;
- an impurity region formed in the substrate and around the cavity;
- a second insulating film formed on portions of the first insulating film to fill the holes and a space between the cavity and the impurity region;
- a plurality of contact holes formed to expose certain portions of the impurity region;
- and
- a plurality of wiring layers formed to be in contact with the impurity region through the contact holes.
Dependencies are inferred from the claim text.