Semiconductor device containing a diode
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsYasunori Yamashita, Tomohide Terashima, Fumitoshi Yamamoto
Life of this patent
Estimating the term…
Abstract
A semiconductor device which has few peripheral element malfunctions and superior performance is obtained. The semiconductor device includes a p-type buried layer on a main surface of a semiconductor substrate, an n-type cathode region provided on the p-type buried layer, and a p-type anode region in contact with the side surface of the n-type cathode region, the p-type buried layer being higher than the p-type anode region in acceptor content, and the p-type buried layer being in contact with the bottom surfaces of the anode and cathode regions.
Claims9
A semiconductor device containing a diode comprising:
- a p-type buried semiconductor layer provided at a main surface of a semiconductor substrate;
- a cathode region formed of an n-type semiconductor layer provided on said p-type buried semiconductor layer;
- and
- an anode region formed of a p-type semiconductor layer formed to surround and be in contact with a side surface of said cathode region,
- said p-type buried semiconductor layer being higher than said anode region in acceptor content, and
- said p-type buried semiconductor layer being in electrical contact with bottom surfaces of said cathode region and said anode region.
A semiconductor device, comprising:
- a p-type buried semiconductor layer provided at a main surface of a semiconductor substrate;
- a cathode region formed of an n-type semiconductor layer provided on said p-type buried semiconductor layer;
- an anode region formed of a p-type semiconductor layer formed to surround and be in contact with a side surface of said cathode region,
- said p-type buried semiconductor layer being higher than said anode region in acceptor content, and
- said p-type buried semiconductor layer being in electrical contact with bottom surfaces of said cathode region and said anode region;
- an n-type semiconductor region surrounding and being in contact with an outer side surface of said anode region;
- and
- a p-type semiconductor region being in contact with said n-type semiconductor region along a circumferential direction and at an equal potential to said n-type semiconductor region, wherein
- said p-type buried semiconductor layer having width and arrangement which cause the layer to be in contact at least with the entire bottom surfaces of said cathode region and said anode region.
Dependencies are inferred from the claim text.