Formation and control of a vertically oriented transistor channel length

Abstract

A process is provided for forming a transistor in which the channel length is controlled by the depth of a trench etched into a semiconductor substrate. A masking layer extending across the substrate and a portion of the substrate are etched simultaneously to form the trench. A gate dielectric is formed upon the opposed sidewall surfaces of the trench. A pair of gate conductors are then formed upon the exposed lateral surfaces of the gate dielectric and the masking layer. Subsequently, an unmasked region of the substrate underneath the trench is implanted with dopant species and then annealed to form a source junction. The anneal temperature is preferably sufficient to cause the dopant species in the source junction to migrate laterally past the opposed sidewall surfaces of the trench. Drain junctions may subsequently be formed within the substrate a spaced distance above the source region on opposite sides of the trench. The physical channel length of the resulting transistors is thus defined as the distance between a source region and an overlying drain region. The channel of each transistor is spaced laterally from a gate conductor by a gate dielectric.

Dependencies are inferred from the claim text.