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US 6,191,399 B1Granted
System of controlling the temperature of a processing chamber
AssigneeASM America, Inc.
InventorFrank B. M. Van Bilsen
Life of this patent
Estimating the term…
Abstract
A CVD processing reactor employs a pyrometer to control temperature ramping. The pyrometer is calibrated between wafer processing by using a thermocouple that senses temperature during a steady state portion of a processing operation.
Claims14
A method of processing a substrate by a processing operation in a semiconductor processing chamber, comprising the steps of:
- supporting the substrate on a holder within the chamber;
- sensing the temperature near the substrate by using a non-contact-type temperature sensor;
- controlling the temperature of the processing chamber by using at least one temperature controller that is generally responsive to the temperature sensed by said non-contact-type temperature sensor;
- sensing the temperature of said substrate within the processing chamber during a steady state portion of the processing operation by using a contact-type temperature sensor;
- sensing the temperature of the substrate by using said non-contact-type sensor, at substantially the same time as said sensing by using said contact-type sensor;
- comparing the temperature sensed by the contact-type sensor to the temperature sensed by the non-contact-type sensor;
- and
- adjusting the response of the temperature controller to the temperature sensed by the non-contact-type sensor based on the comparison.
5 more elements
A method of processing a substrate in a processing chamber, comprising:
- placing a wafer in the processing chamber;
- ramping the temperature of the substrate with a temperature controller that is responsive to temperature measurements from a non-contact-type temperature sensor;
- and
- adjusting the response of the temperature controller to the temperature received from the non-contact-type sensor by reference to a temperature measurement from a contact-type sensor that is taken during a steady state portion of the processing.
1 more element
A semiconductor processing apparatus, comprising:
- a processing chamber;
- a substrate support within the chamber;
- at least one heating element arranged to heat the substrate within the chamber;
- a non-contact-type temperature sensor arranged to measure the temperature of the substrate when supported within the chamber;
- a contact-type temperature sensor to be thermally coupled to the substrate supported within the chamber;
- and
- a temperature controller associated with said heating element and said non-contact-type temperature sensor for controlling the temperature of the substrate and associated with said contact-type sensor for adjusting the response of the temperature controller to the non-contact-type sensor.
4 more elements
A method of calibrating a non-contact-type sensor in a processing chamber, comprising:
- measuring the temperature of an object within the chamber during a steady state portion of the process by using a contact-type sensor;
- measuring the temperature of the object by using the non-contact-type sensor at substantially the same time;
- comparing the measurement from the contact-type sensor to the measurement from the non-contact-type;
- and
- adjusting the measurement of the non-contact type sensor based on the comparison, the adjustment taking effect after the current iteration of processing recipe for the object.
2 more elements
Dependencies are inferred from the claim text.